SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE
(2018) In Journal of the Korean Physical Society 73(11). p.1604-1611- Abstract
Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from... (More)
Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications.
(Less)
- author
- Hussain, Laiq LU ; Pettersson, Håkan LU ; Wang, Qin ; Karim, Amir ; Anderson, Jan ; Jafari, Mehrdad ; Song, Jindong ; Choi, Won Jun ; Han, Il Ki and Lim, Ju Young
- organization
- publishing date
- 2018
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- IR detector, LWIR, MWIR, Sb-based thin films, SWIR
- in
- Journal of the Korean Physical Society
- volume
- 73
- issue
- 11
- pages
- 8 pages
- publisher
- Korean Physical Society
- external identifiers
-
- scopus:85058784548
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.73.1604
- language
- English
- LU publication?
- yes
- id
- ff72de92-0bce-4465-813a-9b7faf701b9a
- date added to LUP
- 2019-01-04 09:54:11
- date last changed
- 2023-09-08 15:19:32
@article{ff72de92-0bce-4465-813a-9b7faf701b9a,
abstract = {{<p>Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAs<sub>x</sub>Sb<sub>1−x</sub>, In<sub>1−x</sub>Ga<sub>x</sub>Sb, and InAs<sub>x</sub>Sb<sub>1−x</sub> with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAs<sub>x</sub>Sb<sub>1−x</sub> and In<sub>1−x</sub>Ga<sub>x</sub>Sb samples even at room temperature show promising potential for IR photodetector applications.</p>}},
author = {{Hussain, Laiq and Pettersson, Håkan and Wang, Qin and Karim, Amir and Anderson, Jan and Jafari, Mehrdad and Song, Jindong and Choi, Won Jun and Han, Il Ki and Lim, Ju Young}},
issn = {{0374-4884}},
keywords = {{IR detector; LWIR; MWIR; Sb-based thin films; SWIR}},
language = {{eng}},
number = {{11}},
pages = {{1604--1611}},
publisher = {{Korean Physical Society}},
series = {{Journal of the Korean Physical Society}},
title = {{SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE}},
url = {{http://dx.doi.org/10.3938/jkps.73.1604}},
doi = {{10.3938/jkps.73.1604}},
volume = {{73}},
year = {{2018}},
}