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- 2010
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Mark
Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
(
- Contribution to journal › Article
- 2004
-
Mark
Electrical properties of InAs-based nanowires
2004) Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials 723. p.449-452(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding