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- 2005
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Mark
Epitaxielle Kristallnadeln und -bäume
2005) DGKK-Jahrestagung, Köln, Germany (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Growth aspects of nanowire fabrication
2005) 16th Amer. Conf on Crystal Growth and Epitaxy and 12th US Biennial Workshop on Organomet Vapor Phase Epitaxy, 2005(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Tuning of growth of III-V semiconductor nanowires and nanotrees by analytical electron microscopy
2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Failure of the vapor-liquid-solid mechanism in Au-assisted growth of InAs nanowires
2005) 11th European Workshop on MOVPE, Lausanne, Switzerland (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
A mass-transport model for semiconductor nanowire growth
2005) 11th European Workshop on MOVPE, Lausanne, Switzerland (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Aspekte des Wachstums von Nanowhiskern
2005) DGKK-Workshop Epitaxie von III/V-Halbleitern, Duisburg, Germany (2005), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
One-dimensional epitaxial compound semiconductor structures
2005) 10th Intl Symp on Advanced Physical Fields: Fabrication of Nanostr, Tsukuba, Japan (2005), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Importance of the particle/wire interface for defect free nanowire growth
2005) 16th Amer. Conf on Crystal Growth and Epitaxy and 12th US Biennial Workshop on Organomet Vapor Phase Epitaxy, 2005(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Direct observation of the atomic scale structure inside a nanowire
2005) 32nd Conf on the Physics and Chemistry of Semicond Interfaces, Bozeman, Mo, USA (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Influence of the spacer layer distance in stacked InAs/InP quantum dots, studied by cross-sectional scanning tunneling microscopy
2005) 13th Intl Congr on Thin Films and 8th Intl Conf on Atomically Controlled Surf, Interfaces and Nanostr, Stockholm, Sweden (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding