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- 2014
-
Mark
Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations
(
- Contribution to journal › Article
- 2010
-
Mark
Giant anisotropic magnetoresistance in insulating ultrathin (Ga,Mn)As
(
- Contribution to journal › Article
- 2009
-
Mark
Formation of epitaxial MnBi layers on (Ga,Mn)As
(
- Contribution to journal › Article
-
Mark
The ratio of interstitial to substitutional site occupation by Mn atoms in GaAs estimated by EXAFS
2009) 9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9) 78. p.80-85(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Photoemission from alpha and beta phases of the GaAs(001)-c(4 x 4) surface
(
- Contribution to journal › Article
- 2008
-
Mark
Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study
(
- Contribution to journal › Article
- 2004
-
Mark
Electron mean free path for GaAs(100)-c(4x4) at very low energies
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Photoemission study of LT-GaAs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding