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LUP Student Papers

LUND UNIVERSITY LIBRARIES

Surface Chemistry and Electrical properties of nanowire devices

Shah, Jalil LU (2013) FYSM60 20131
Department of Physics
Synchrotron Radiation Research
Abstract
Surface chemistry and electrical properties of InAs and InP III-V semiconductor nanowires and nanowire based devices were studied using Scanning Tunneling Microscopy (STM) and Spectroscopic Emission and Low Energy Electron Microscopy (SPELEEM). Changes of the surface as well as electrical properties in these devices as a function of annealing temperature under atomic hydrogen background were studied and discussed. First, the cleaned surface of InAs (111)B substrate is analyzed and then the surface studies of InAs nanowires were done. SPELEEM technique with several mode of operations like XPEEM, LEEM and MEM, were done to find the temperature at which the InAs nanowire based device changes, not only the nanowire itself but also the over-all... (More)
Surface chemistry and electrical properties of InAs and InP III-V semiconductor nanowires and nanowire based devices were studied using Scanning Tunneling Microscopy (STM) and Spectroscopic Emission and Low Energy Electron Microscopy (SPELEEM). Changes of the surface as well as electrical properties in these devices as a function of annealing temperature under atomic hydrogen background were studied and discussed. First, the cleaned surface of InAs (111)B substrate is analyzed and then the surface studies of InAs nanowires were done. SPELEEM technique with several mode of operations like XPEEM, LEEM and MEM, were done to find the temperature at which the InAs nanowire based device changes, not only the nanowire itself but also the over-all device surface features like contacts and the substrate. Finally, the I-V measurements were performed for the n-doped InP nanowire based device and InAs nanowire based device for the electrical properties of the devices. SEM images were analyzed for the annealed devices for more information. The conclusion is that the surface oxides were successfully removed by H-cleaning while at moderate temperatures there is only a tiny effect on the conductance of the nanowire device. There is a strong change in metallic contacts at temperatures above than 500˚C, which then strongly affects the device conductance. (Less)
Please use this url to cite or link to this publication:
author
Shah, Jalil LU
supervisor
organization
course
FYSM60 20131
year
type
H2 - Master's Degree (Two Years)
subject
keywords
Nanowires, InAs, InP, Scanning Tunneling Microscopy, PEEM, Conductivity, Surface Oxides
language
English
id
4004182
date added to LUP
2014-03-26 13:06:38
date last changed
2014-03-26 13:06:38
@misc{4004182,
  abstract     = {Surface chemistry and electrical properties of InAs and InP III-V semiconductor nanowires and nanowire based devices were studied using Scanning Tunneling Microscopy (STM) and Spectroscopic Emission and Low Energy Electron Microscopy (SPELEEM). Changes of the surface as well as electrical properties in these devices as a function of annealing temperature under atomic hydrogen background were studied and discussed. First, the cleaned surface of InAs (111)B substrate is analyzed and then the surface studies of InAs nanowires were done. SPELEEM technique with several mode of operations like XPEEM, LEEM and MEM, were done to find the temperature at which the InAs nanowire based device changes, not only the nanowire itself but also the over-all device surface features like contacts and the substrate. Finally, the I-V measurements were performed for the n-doped InP nanowire based device and InAs nanowire based device for the electrical properties of the devices. SEM images were analyzed for the annealed devices for more information. The conclusion is that the surface oxides were successfully removed by H-cleaning while at moderate temperatures there is only a tiny effect on the conductance of the nanowire device. There is a strong change in metallic contacts at temperatures above than 500˚C, which then strongly affects the device conductance.},
  author       = {Shah, Jalil},
  keyword      = {Nanowires,InAs,InP,Scanning Tunneling Microscopy,PEEM,Conductivity,Surface Oxides},
  language     = {eng},
  note         = {Student Paper},
  title        = {Surface Chemistry and Electrical properties of nanowire devices},
  year         = {2013},
}