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Optimizing the RF-parameters for an III-V FinFET

Sjöberg, Hugo LU (2015) EITM01 20151
Department of Electrical and Information Technology
Abstract
Using the 3D finite element tool COMSOL a III-V FinFET was mod- eled based on Cezar Zota, Erik Lind and Lars-Erik Wernerssons work. Using this model, the gate-source parasitic capacitance, the gate-drain parasitic capacitance, the source and drain resistances were simulated. Changing the geometry of the FinFET was done in order to optimize the transistor in regard for the transition frequency and the maximum oscillation frequency and improving the frequencies with over 350%.
Popular Abstract
By using the 3D finite element tool COMSOL an existing III-V FinFET to optimize the parameters and the performance. Changing the geometry of the FinFET done in order to optimize the transistor in regard for the transition frequency and the maximum oscillation frequency and improving the frequencies with over 350%
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author
Sjöberg, Hugo LU
supervisor
organization
course
EITM01 20151
year
type
H2 - Master's Degree (Two Years)
subject
report number
LU/LTH-EIT 2015-455
language
English
id
7862323
date added to LUP
2015-09-09 14:51:48
date last changed
2015-09-09 14:51:48
@misc{7862323,
  abstract     = {Using the 3D finite element tool COMSOL a III-V FinFET was mod- eled based on Cezar Zota, Erik Lind and Lars-Erik Wernerssons work. Using this model, the gate-source parasitic capacitance, the gate-drain parasitic capacitance, the source and drain resistances were simulated. Changing the geometry of the FinFET was done in order to optimize the transistor in regard for the transition frequency and the maximum oscillation frequency and improving the frequencies with over 350%.},
  author       = {Sjöberg, Hugo},
  language     = {eng},
  note         = {Student Paper},
  title        = {Optimizing the RF-parameters for an III-V FinFET},
  year         = {2015},
}