Optimizing the RF-parameters for an III-V FinFET
(2015) EITM01 20151Department of Electrical and Information Technology
- Abstract
- Using the 3D finite element tool COMSOL a III-V FinFET was mod- eled based on Cezar Zota, Erik Lind and Lars-Erik Wernerssons work. Using this model, the gate-source parasitic capacitance, the gate-drain parasitic capacitance, the source and drain resistances were simulated. Changing the geometry of the FinFET was done in order to optimize the transistor in regard for the transition frequency and the maximum oscillation frequency and improving the frequencies with over 350%.
- Popular Abstract
- By using the 3D finite element tool COMSOL an existing III-V FinFET to optimize the parameters and the performance. Changing the geometry of the FinFET done in order to optimize the transistor in regard for the transition frequency and the maximum oscillation frequency and improving the frequencies with over 350%
Please use this url to cite or link to this publication:
http://lup.lub.lu.se/student-papers/record/7862323
- author
- Sjöberg, Hugo LU
- supervisor
- organization
- course
- EITM01 20151
- year
- 2015
- type
- H2 - Master's Degree (Two Years)
- subject
- report number
- LU/LTH-EIT 2015-455
- language
- English
- id
- 7862323
- date added to LUP
- 2015-09-09 14:51:48
- date last changed
- 2015-09-09 14:51:48
@misc{7862323,
abstract = {{Using the 3D finite element tool COMSOL a III-V FinFET was mod- eled based on Cezar Zota, Erik Lind and Lars-Erik Wernerssons work. Using this model, the gate-source parasitic capacitance, the gate-drain parasitic capacitance, the source and drain resistances were simulated. Changing the geometry of the FinFET was done in order to optimize the transistor in regard for the transition frequency and the maximum oscillation frequency and improving the frequencies with over 350%.}},
author = {{Sjöberg, Hugo}},
language = {{eng}},
note = {{Student Paper}},
title = {{Optimizing the RF-parameters for an III-V FinFET}},
year = {{2015}},
}