X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire
(2017) In ACS Nano 11(7). p.6605-6611- Abstract
The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to... (More)
The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.
(Less)
- author
- organization
- publishing date
- 2017-07-25
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Bragg ptychography, Finite Element Method, GaN, InGaN, nanowire
- in
- ACS Nano
- volume
- 11
- issue
- 7
- pages
- 7 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85026311468
- pmid:28264155
- wos:000406649700008
- ISSN
- 1936-0851
- DOI
- 10.1021/acsnano.6b08122
- language
- English
- LU publication?
- yes
- id
- 04c6e11c-e7ed-4eb1-8137-7ed28848f461
- date added to LUP
- 2017-08-31 13:06:03
- date last changed
- 2024-07-22 03:02:26
@article{04c6e11c-e7ed-4eb1-8137-7ed28848f461, abstract = {{<p>The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.</p>}}, author = {{Dzhigaev, Dmitry and Stankevič, Tomaš and Bi, Zhaoxia and Lazarev, Sergey and Rose, Max and Shabalin, Anatoly and Reinhardt, Juliane and Mikkelsen, Anders and Samuelson, Lars and Falkenberg, Gerald and Feidenhans'l, Robert and Vartanyants, Ivan A.}}, issn = {{1936-0851}}, keywords = {{Bragg ptychography; Finite Element Method; GaN; InGaN; nanowire}}, language = {{eng}}, month = {{07}}, number = {{7}}, pages = {{6605--6611}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Nano}}, title = {{X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire}}, url = {{http://dx.doi.org/10.1021/acsnano.6b08122}}, doi = {{10.1021/acsnano.6b08122}}, volume = {{11}}, year = {{2017}}, }