Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)
(2017) In Ultramicroscopy 183. p.49-54- Abstract
The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSix and SnOx interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based... (More)
The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSix and SnOx interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based devices.
(Less)
- author
- Niu, Y. R. LU ; Zakharov, A. A. LU and Yakimova, R
- organization
- publishing date
- 2017-12
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Ultramicroscopy
- volume
- 183
- pages
- 49 - 54
- publisher
- Elsevier
- external identifiers
-
- pmid:28527595
- wos:000415578200009
- scopus:85020103272
- ISSN
- 0304-3991
- DOI
- 10.1016/j.ultramic.2017.05.010
- language
- English
- LU publication?
- yes
- id
- 11c8a2db-e29e-46b8-8adf-3d783402210a
- date added to LUP
- 2017-07-03 08:53:28
- date last changed
- 2024-03-31 12:27:29
@article{11c8a2db-e29e-46b8-8adf-3d783402210a, abstract = {{<p>The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSi<sub>x</sub> and SnO<sub>x</sub> interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based devices.</p>}}, author = {{Niu, Y. R. and Zakharov, A. A. and Yakimova, R}}, issn = {{0304-3991}}, language = {{eng}}, pages = {{49--54}}, publisher = {{Elsevier}}, series = {{Ultramicroscopy}}, title = {{Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)}}, url = {{http://dx.doi.org/10.1016/j.ultramic.2017.05.010}}, doi = {{10.1016/j.ultramic.2017.05.010}}, volume = {{183}}, year = {{2017}}, }