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Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)

Niu, Y. R. LU ; Zakharov, A. A. LU and Yakimova, R (2017) In Ultramicroscopy 183. p.49-54
Abstract

The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSix and SnOx interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based... (More)

The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSix and SnOx interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based devices.

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author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Ultramicroscopy
volume
183
pages
49 - 54
publisher
Elsevier
external identifiers
  • pmid:28527595
  • wos:000415578200009
  • scopus:85020103272
ISSN
0304-3991
DOI
10.1016/j.ultramic.2017.05.010
language
English
LU publication?
yes
id
11c8a2db-e29e-46b8-8adf-3d783402210a
date added to LUP
2017-07-03 08:53:28
date last changed
2024-03-31 12:27:29
@article{11c8a2db-e29e-46b8-8adf-3d783402210a,
  abstract     = {{<p>The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSi<sub>x</sub> and SnO<sub>x</sub> interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based devices.</p>}},
  author       = {{Niu, Y. R. and Zakharov, A. A. and Yakimova, R}},
  issn         = {{0304-3991}},
  language     = {{eng}},
  pages        = {{49--54}},
  publisher    = {{Elsevier}},
  series       = {{Ultramicroscopy}},
  title        = {{Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)}},
  url          = {{http://dx.doi.org/10.1016/j.ultramic.2017.05.010}},
  doi          = {{10.1016/j.ultramic.2017.05.010}},
  volume       = {{183}},
  year         = {{2017}},
}