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Single-electron transistors in heterostructure nanowires.

Thelander, Claes LU ; Mårtensson, Thomas LU ; Björk, Mikael LU ; Ohlsson, B J ; Larsson, Marcus LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2003) In Applied Physics Letters 83(10). p.2052-2054
Abstract
Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
83
issue
10
pages
2052 - 2054
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000185089800049
  • scopus:0141920578
ISSN
0003-6951
DOI
10.1063/1.1606889
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006), Neuronano Research Center (NRC) (013210020), NanoLund (011012012)
id
b01a6230-1c47-4e26-8a97-c3894418cb26 (old id 128432)
date added to LUP
2016-04-01 12:23:24
date last changed
2022-02-03 21:34:18
@article{b01a6230-1c47-4e26-8a97-c3894418cb26,
  abstract     = {{Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.}},
  author       = {{Thelander, Claes and Mårtensson, Thomas and Björk, Mikael and Ohlsson, B J and Larsson, Marcus and Wallenberg, Reine and Samuelson, Lars}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{10}},
  pages        = {{2052--2054}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Single-electron transistors in heterostructure nanowires.}},
  url          = {{http://dx.doi.org/10.1063/1.1606889}},
  doi          = {{10.1063/1.1606889}},
  volume       = {{83}},
  year         = {{2003}},
}