Structural Characterisation of GaP <111 > B Nanowires by HRTEM
(2008) 15th Conference on Microscopy of Semiconducting Materials 120. p.229-232- Abstract
- GaP < 111 > B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60 degrees about the growth axis or 180 degrees in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence oil growth ternperature. Multislice simulations show different features of the twin types that are useful for further characterisation.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1375323
- author
- Karlsson, L. S. ; Johansson, Jonas LU ; Svensson, C. P. T. ; Mårtensson, Thomas LU ; Wacaser, Brent LU ; Malm, Jakob LU ; Deppert, Knut LU ; Seifert, Werner LU ; Samuelson, Lars LU and Wallenberg, L.R.
- organization
- publishing date
- 2008
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Microscopy of Semiconducting Material 2007
- volume
- 120
- pages
- 229 - 232
- publisher
- Springer
- conference name
- 15th Conference on Microscopy of Semiconducting Materials
- conference dates
- 2007-04-02 - 2007-04-05
- external identifiers
-
- wos:000263468800050
- ISSN
- 0930-8989
- ISBN
- 978-1-4020-8614-4
- language
- English
- LU publication?
- yes
- id
- 19412105-05da-4bd4-bb79-40d9427c37d5 (old id 1375323)
- date added to LUP
- 2016-04-01 14:51:31
- date last changed
- 2019-03-08 03:30:03
@inproceedings{19412105-05da-4bd4-bb79-40d9427c37d5, abstract = {{GaP < 111 > B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60 degrees about the growth axis or 180 degrees in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence oil growth ternperature. Multislice simulations show different features of the twin types that are useful for further characterisation.}}, author = {{Karlsson, L. S. and Johansson, Jonas and Svensson, C. P. T. and Mårtensson, Thomas and Wacaser, Brent and Malm, Jakob and Deppert, Knut and Seifert, Werner and Samuelson, Lars and Wallenberg, L.R.}}, booktitle = {{Microscopy of Semiconducting Material 2007}}, isbn = {{978-1-4020-8614-4}}, issn = {{0930-8989}}, language = {{eng}}, pages = {{229--232}}, publisher = {{Springer}}, title = {{Structural Characterisation of GaP <111 > B Nanowires by HRTEM}}, volume = {{120}}, year = {{2008}}, }