Semiconductor nanowires for 0D and 1D physics and applications
(2004) In Physica E: Low-Dimensional Systems and Nanostructures 25(2-3). p.313-318- Abstract
- During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.
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- author
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanowires, Quantum confinement, Single-electron tunneling 68.65.−k, 78.67.Lt, 73.63.−b, 73.23.Hk, Heterostructures
- in
- Physica E: Low-Dimensional Systems and Nanostructures
- volume
- 25
- issue
- 2-3
- pages
- 313 - 318
- publisher
- Elsevier
- external identifiers
-
- wos:000225282500023
- scopus:9644283361
- ISSN
- 1386-9477
- DOI
- 10.1016/j.physe.2004.06.030
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- 9e7ee5f3-d364-428e-9c83-83d48ae0e4dd (old id 140822)
- date added to LUP
- 2016-04-01 16:01:57
- date last changed
- 2022-01-28 08:49:46
@article{9e7ee5f3-d364-428e-9c83-83d48ae0e4dd, abstract = {{During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.}}, author = {{Samuelson, Lars and Thelander, Claes and Björk, Mikael and Borgström, Magnus and Deppert, Knut and Dick Thelander, Kimberly and Hansen, Adam and Mårtensson, Thomas and Panev, Nikolay and Persson, Ann and Seifert, Werner and Sköld, Niklas and Larsson, Magnus and Wallenberg, Reine}}, issn = {{1386-9477}}, keywords = {{Nanowires; Quantum confinement; Single-electron tunneling 68.65.−k; 78.67.Lt; 73.63.−b; 73.23.Hk; Heterostructures}}, language = {{eng}}, number = {{2-3}}, pages = {{313--318}}, publisher = {{Elsevier}}, series = {{Physica E: Low-Dimensional Systems and Nanostructures}}, title = {{Semiconductor nanowires for 0D and 1D physics and applications}}, url = {{http://dx.doi.org/10.1016/j.physe.2004.06.030}}, doi = {{10.1016/j.physe.2004.06.030}}, volume = {{25}}, year = {{2004}}, }