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Defect-free InP nanowires grown in [001] direction on InP(001)

Krishnamachari, U ; Borgström, Magnus LU ; Ohlsson, Jonas LU ; Panev, Nikolay LU ; Samuelson, Lars LU ; Seifert, Werner LU ; Larsson, Magnus LU and Wallenberg, Reine LU (2004) In Applied Physics Letters 85(11). p.2077-2079
Abstract
We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
85
issue
11
pages
2077 - 2079
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000223923300070
  • scopus:5444234721
ISSN
0003-6951
DOI
10.1063/1.1784548
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
id
a293e8c3-7674-4c2b-9bff-b94d44c30967 (old id 140858)
date added to LUP
2016-04-01 12:24:07
date last changed
2022-01-27 03:16:22
@article{a293e8c3-7674-4c2b-9bff-b94d44c30967,
  abstract     = {{We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas &lt;111&gt;B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.}},
  author       = {{Krishnamachari, U and Borgström, Magnus and Ohlsson, Jonas and Panev, Nikolay and Samuelson, Lars and Seifert, Werner and Larsson, Magnus and Wallenberg, Reine}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{11}},
  pages        = {{2077--2079}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Defect-free InP nanowires grown in [001] direction on InP(001)}},
  url          = {{http://dx.doi.org/10.1063/1.1784548}},
  doi          = {{10.1063/1.1784548}},
  volume       = {{85}},
  year         = {{2004}},
}