The ratio of interstitial to substitutional site occupation by Mn atoms in GaAs estimated by EXAFS
(2009) 9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9) 78. p.80-85- Abstract
- The location of Mn atoms in the MBE-grown layers of Ga1-xMnxAs is correlated with all important physical properties of the final material, therefore, it is the subject of many studies. It is known that in the as-grown MBE samples the Mn atoms occupy substitutional and interstitial positions but the proportion between these sites is not easy to find. A powerful tool for this kind of study is XAS as it probes the local atomic order and the electronic structure. The EXAFS data analysis was performed considering superposition of possible Mn locations. This allowed for determination of the distribution of Mn between those two lattice sites. (C) 2009 Elsevier Ltd. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1507212
- author
- Lawniczak-Jablonska, K. ; Libera, J. ; Wolska, A. ; Klepka, M. T. ; Jakiela, R. and Sadowski, Janusz LU
- organization
- publishing date
- 2009
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Semiconductors, Interstitial, Spintronics, Local order, X-ray absorption, Gallium arsenide, EXAFS, Manganese
- host publication
- Radiation Physics and Chemistry
- volume
- 78
- pages
- 80 - 85
- publisher
- Elsevier
- conference name
- 9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9)
- conference location
- Ameliowka, Poland
- conference dates
- 2008-06-15 - 2008-06-20
- external identifiers
-
- wos:000270692000018
- scopus:69049093723
- ISSN
- 0969-806X
- DOI
- 10.1016/j.radphyschem.2009.03.089
- language
- English
- LU publication?
- yes
- id
- 67dcd67c-8222-4586-8dd1-a8e25e9634db (old id 1507212)
- date added to LUP
- 2016-04-01 13:40:35
- date last changed
- 2022-01-27 20:26:15
@inproceedings{67dcd67c-8222-4586-8dd1-a8e25e9634db, abstract = {{The location of Mn atoms in the MBE-grown layers of Ga1-xMnxAs is correlated with all important physical properties of the final material, therefore, it is the subject of many studies. It is known that in the as-grown MBE samples the Mn atoms occupy substitutional and interstitial positions but the proportion between these sites is not easy to find. A powerful tool for this kind of study is XAS as it probes the local atomic order and the electronic structure. The EXAFS data analysis was performed considering superposition of possible Mn locations. This allowed for determination of the distribution of Mn between those two lattice sites. (C) 2009 Elsevier Ltd. All rights reserved.}}, author = {{Lawniczak-Jablonska, K. and Libera, J. and Wolska, A. and Klepka, M. T. and Jakiela, R. and Sadowski, Janusz}}, booktitle = {{Radiation Physics and Chemistry}}, issn = {{0969-806X}}, keywords = {{Semiconductors; Interstitial; Spintronics; Local order; X-ray absorption; Gallium arsenide; EXAFS; Manganese}}, language = {{eng}}, pages = {{80--85}}, publisher = {{Elsevier}}, title = {{The ratio of interstitial to substitutional site occupation by Mn atoms in GaAs estimated by EXAFS}}, url = {{http://dx.doi.org/10.1016/j.radphyschem.2009.03.089}}, doi = {{10.1016/j.radphyschem.2009.03.089}}, volume = {{78}}, year = {{2009}}, }