Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
(2010) In Nanotechnology 21(10).- Abstract
- We have employed time-resolved photoluminescence (PL) spectroscopy to study the impact of HfO2 surface capping by atomic layer deposition (ALD) on the optical properties of InP nanowires (NWs). The deposition of high-kappa dielectrics acting as a gate oxide is of particular interest in view of possible applications of semiconductor NWs in future wrap-gated field effect transistors (FETs). A high number of charged states at the NW-dielectrics interface can strongly degrade the performance of the FET which explains the strong interest in high quality deposition of high-kappa dielectrics. In the present work we show that time-resolved spectroscopy is a valuable and direct tool to monitor the surface quality of HfO2-capped InP NWs. In... (More)
- We have employed time-resolved photoluminescence (PL) spectroscopy to study the impact of HfO2 surface capping by atomic layer deposition (ALD) on the optical properties of InP nanowires (NWs). The deposition of high-kappa dielectrics acting as a gate oxide is of particular interest in view of possible applications of semiconductor NWs in future wrap-gated field effect transistors (FETs). A high number of charged states at the NW-dielectrics interface can strongly degrade the performance of the FET which explains the strong interest in high quality deposition of high-kappa dielectrics. In the present work we show that time-resolved spectroscopy is a valuable and direct tool to monitor the surface quality of HfO2-capped InP NWs. In particular, we have studied the impact of ALD process parameters as well as surface treatment prior to the oxide capping on the NW-dielectrics interface quality. The best results in terms of the surface recombination velocity (S-0 = 9.5 x 10(3) cm s(-1)) were obtained for InP/GaP core/shell NWs in combination with a low temperature (100 degrees C) ALD process. While the present report focuses on the InP material system, our method of addressing the surface treatment for semiconductors with high-kappa dielectrics will also be applicable to nanoelectronic devices based on other III/V material systems such as InAs. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1568466
- author
- Muench, S. ; Reitzenstein, S. ; Borgström, Magnus LU ; Thelander, Claes LU ; Samuelson, Lars LU ; Worschech, L. and Forchel, A.
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 21
- issue
- 10
- article number
- 105711
- publisher
- IOP Publishing
- external identifiers
-
- wos:000274572900034
- scopus:77149151611
- pmid:20157234
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/21/10/105711
- language
- English
- LU publication?
- yes
- id
- a7e8fed6-2a90-4793-9e3a-2d28f30790a7 (old id 1568466)
- date added to LUP
- 2016-04-01 10:32:03
- date last changed
- 2023-10-26 13:02:03
@article{a7e8fed6-2a90-4793-9e3a-2d28f30790a7, abstract = {{We have employed time-resolved photoluminescence (PL) spectroscopy to study the impact of HfO2 surface capping by atomic layer deposition (ALD) on the optical properties of InP nanowires (NWs). The deposition of high-kappa dielectrics acting as a gate oxide is of particular interest in view of possible applications of semiconductor NWs in future wrap-gated field effect transistors (FETs). A high number of charged states at the NW-dielectrics interface can strongly degrade the performance of the FET which explains the strong interest in high quality deposition of high-kappa dielectrics. In the present work we show that time-resolved spectroscopy is a valuable and direct tool to monitor the surface quality of HfO2-capped InP NWs. In particular, we have studied the impact of ALD process parameters as well as surface treatment prior to the oxide capping on the NW-dielectrics interface quality. The best results in terms of the surface recombination velocity (S-0 = 9.5 x 10(3) cm s(-1)) were obtained for InP/GaP core/shell NWs in combination with a low temperature (100 degrees C) ALD process. While the present report focuses on the InP material system, our method of addressing the surface treatment for semiconductors with high-kappa dielectrics will also be applicable to nanoelectronic devices based on other III/V material systems such as InAs.}}, author = {{Muench, S. and Reitzenstein, S. and Borgström, Magnus and Thelander, Claes and Samuelson, Lars and Worschech, L. and Forchel, A.}}, issn = {{0957-4484}}, language = {{eng}}, number = {{10}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Time-resolved photoluminescence investigations on HfO2-capped InP nanowires}}, url = {{http://dx.doi.org/10.1088/0957-4484/21/10/105711}}, doi = {{10.1088/0957-4484/21/10/105711}}, volume = {{21}}, year = {{2010}}, }