Giant anisotropic magnetoresistance in insulating ultrathin (Ga,Mn)As
(2010) In Applied Physics Letters 96(5).- Abstract
- Molecular-beam epitaxy grown, 5 nm thick annealed Ga0.95Mn0.05As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the metal-insulator transition we found the giant anisotropic magnetoresistance (GAMR) effect, which depends on the orientation of magnetization to crystallographic axes and demonstrates the twofold symmetry angular dependence. The GAMR manifests itself in positive magnetoresistance near 50% at T=1.7 K for H//[110] crystallographic direction in contrast to smaller negative magnetoresistance for H//[110] direction. We connect the GAMR with formation of high- and low-resistance states with different... (More)
- Molecular-beam epitaxy grown, 5 nm thick annealed Ga0.95Mn0.05As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the metal-insulator transition we found the giant anisotropic magnetoresistance (GAMR) effect, which depends on the orientation of magnetization to crystallographic axes and demonstrates the twofold symmetry angular dependence. The GAMR manifests itself in positive magnetoresistance near 50% at T=1.7 K for H//[110] crystallographic direction in contrast to smaller negative magnetoresistance for H//[110] direction. We connect the GAMR with formation of high- and low-resistance states with different localization due to anisotropic spin-orbit interaction. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1571211
- author
- Gareev, R. R. ; Petukhov, A. ; Schlapps, M. ; Sadowski, Janusz LU and Wegscheider, W.
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- metal-insulator transition, compounds, manganese, magnetisation, magnetic anisotropy, magnetoresistance, giant, gallium arsenide, crystal orientation, electric resistance, molecular beam epitaxial growth, semimagnetic semiconductors, spin-orbit interactions
- in
- Applied Physics Letters
- volume
- 96
- issue
- 5
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000274319500055
- scopus:76449106377
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3309683
- language
- English
- LU publication?
- yes
- id
- e1ab3a01-0a71-456d-8fa2-af4baf8597f3 (old id 1571211)
- date added to LUP
- 2016-04-01 10:40:35
- date last changed
- 2022-02-02 19:54:10
@article{e1ab3a01-0a71-456d-8fa2-af4baf8597f3,
abstract = {{Molecular-beam epitaxy grown, 5 nm thick annealed Ga0.95Mn0.05As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the metal-insulator transition we found the giant anisotropic magnetoresistance (GAMR) effect, which depends on the orientation of magnetization to crystallographic axes and demonstrates the twofold symmetry angular dependence. The GAMR manifests itself in positive magnetoresistance near 50% at T=1.7 K for H//[110] crystallographic direction in contrast to smaller negative magnetoresistance for H//[110] direction. We connect the GAMR with formation of high- and low-resistance states with different localization due to anisotropic spin-orbit interaction.}},
author = {{Gareev, R. R. and Petukhov, A. and Schlapps, M. and Sadowski, Janusz and Wegscheider, W.}},
issn = {{0003-6951}},
keywords = {{metal-insulator transition; compounds; manganese; magnetisation; magnetic anisotropy; magnetoresistance; giant; gallium arsenide; crystal orientation; electric resistance; molecular beam epitaxial growth; semimagnetic semiconductors; spin-orbit interactions}},
language = {{eng}},
number = {{5}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Giant anisotropic magnetoresistance in insulating ultrathin (Ga,Mn)As}},
url = {{http://dx.doi.org/10.1063/1.3309683}},
doi = {{10.1063/1.3309683}},
volume = {{96}},
year = {{2010}},
}