Trivacancy-oxygen complex in silicon: Local vibrational mode characterization
(2009) 25th International Conference on Defects in Semiconductors 404(23-24). p.4568-4571- Abstract
- FTIR study of the evolution of multivacancy-oxygen-related defects in the temperature range 100-350 degrees C in Czochralski-grown Si samples irradiated with different particles (10 MeV electrons and 5 MeV neutrons) has been carried out. Appearance of two absorption bands positioned at 833.4 and 842.4 cm(-1) has been found upon annealing of the divacancy related absorption band at 2767 cm(-1). The 833.4 cm(-1) band is assigned to a divacancy-oxygen defect. The 842.4 cm band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect formed via interaction of mobile V-3 with O-i atoms. (C) 2009 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1586347
- author
- Murin, L. I. ; Svensson, B. G. ; Lindström, Lennart LU ; Markevich, V. P. and Londos, C. A.
- organization
- publishing date
- 2009
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Oxygen, Radiation damage, Silicon, Infra-red absorption
- host publication
- Physica B: Condensed Matter
- volume
- 404
- issue
- 23-24
- pages
- 4568 - 4571
- publisher
- Elsevier
- conference name
- 25th International Conference on Defects in Semiconductors
- conference location
- St Petersburg, Russian Federation
- conference dates
- 2009-07-20 - 2009-07-24
- external identifiers
-
- wos:000276029300019
- scopus:74349108640
- ISSN
- 0921-4526
- DOI
- 10.1016/j.physb.2009.08.144
- language
- English
- LU publication?
- yes
- id
- 49274ac3-2658-4a30-99a2-aa36db80bc4d (old id 1586347)
- date added to LUP
- 2016-04-01 14:36:51
- date last changed
- 2022-01-28 01:35:59
@inproceedings{49274ac3-2658-4a30-99a2-aa36db80bc4d, abstract = {{FTIR study of the evolution of multivacancy-oxygen-related defects in the temperature range 100-350 degrees C in Czochralski-grown Si samples irradiated with different particles (10 MeV electrons and 5 MeV neutrons) has been carried out. Appearance of two absorption bands positioned at 833.4 and 842.4 cm(-1) has been found upon annealing of the divacancy related absorption band at 2767 cm(-1). The 833.4 cm(-1) band is assigned to a divacancy-oxygen defect. The 842.4 cm band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect formed via interaction of mobile V-3 with O-i atoms. (C) 2009 Elsevier B.V. All rights reserved.}}, author = {{Murin, L. I. and Svensson, B. G. and Lindström, Lennart and Markevich, V. P. and Londos, C. A.}}, booktitle = {{Physica B: Condensed Matter}}, issn = {{0921-4526}}, keywords = {{Oxygen; Radiation damage; Silicon; Infra-red absorption}}, language = {{eng}}, number = {{23-24}}, pages = {{4568--4571}}, publisher = {{Elsevier}}, title = {{Trivacancy-oxygen complex in silicon: Local vibrational mode characterization}}, url = {{http://dx.doi.org/10.1016/j.physb.2009.08.144}}, doi = {{10.1016/j.physb.2009.08.144}}, volume = {{404}}, year = {{2009}}, }