Crystal Phase Engineering in Single InAs Nanowires.
(2010) In Nano Letters 10(9). p.3494-3499- Abstract
- Achieving phase purity and control in III-V nanowires is a necessity for future nanowire-based device applications. Many works have focused on cleaning specific crystal phases of defects such as twin planes and stacking faults, using parameters such as diameter, temperature, and impurity incorporation. Here we demonstrate an improved method for crystal phase control, where crystal structure variations in single InAs nanowires are designed with alternating wurtzite (WZ) and zinc blende (ZB) segments of precisely controlled length and perfect interfaces. We also demonstrate the inclusion of single twin planes and stacking faults with atomic precision in their placement, designed ZB quantum dots separated by thin segments of WZ, acting as... (More)
- Achieving phase purity and control in III-V nanowires is a necessity for future nanowire-based device applications. Many works have focused on cleaning specific crystal phases of defects such as twin planes and stacking faults, using parameters such as diameter, temperature, and impurity incorporation. Here we demonstrate an improved method for crystal phase control, where crystal structure variations in single InAs nanowires are designed with alternating wurtzite (WZ) and zinc blende (ZB) segments of precisely controlled length and perfect interfaces. We also demonstrate the inclusion of single twin planes and stacking faults with atomic precision in their placement, designed ZB quantum dots separated by thin segments of WZ, acting as tunnel barriers for electrons, and structural superlattices (polytypic and twin plane). Finally, we present electrical data to demonstrate the applicability of these designed structures to investigation of fundamental properties. From electrical measurements we observe clear signatures of controlled structural quantum dots in nanowires. This method will be directly applicable to a wide range of nanowire systems. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1665270
- author
- Dick Thelander, Kimberly LU ; Thelander, Claes LU ; Samuelson, Lars LU and Caroff, Philippe LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 10
- issue
- 9
- pages
- 3494 - 3499
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000281498200047
- pmid:20707361
- scopus:77956448822
- pmid:20707361
- ISSN
- 1530-6992
- DOI
- 10.1021/nl101632a
- language
- English
- LU publication?
- yes
- id
- 7a0be647-6bd0-4bcf-94d6-9c0ae3c51867 (old id 1665270)
- date added to LUP
- 2016-04-01 14:46:07
- date last changed
- 2023-11-13 12:06:11
@article{7a0be647-6bd0-4bcf-94d6-9c0ae3c51867, abstract = {{Achieving phase purity and control in III-V nanowires is a necessity for future nanowire-based device applications. Many works have focused on cleaning specific crystal phases of defects such as twin planes and stacking faults, using parameters such as diameter, temperature, and impurity incorporation. Here we demonstrate an improved method for crystal phase control, where crystal structure variations in single InAs nanowires are designed with alternating wurtzite (WZ) and zinc blende (ZB) segments of precisely controlled length and perfect interfaces. We also demonstrate the inclusion of single twin planes and stacking faults with atomic precision in their placement, designed ZB quantum dots separated by thin segments of WZ, acting as tunnel barriers for electrons, and structural superlattices (polytypic and twin plane). Finally, we present electrical data to demonstrate the applicability of these designed structures to investigation of fundamental properties. From electrical measurements we observe clear signatures of controlled structural quantum dots in nanowires. This method will be directly applicable to a wide range of nanowire systems.}}, author = {{Dick Thelander, Kimberly and Thelander, Claes and Samuelson, Lars and Caroff, Philippe}}, issn = {{1530-6992}}, language = {{eng}}, number = {{9}}, pages = {{3494--3499}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Crystal Phase Engineering in Single InAs Nanowires.}}, url = {{http://dx.doi.org/10.1021/nl101632a}}, doi = {{10.1021/nl101632a}}, volume = {{10}}, year = {{2010}}, }