Dynamics of extremely anisotropic etching of InP nanowires by HCl
Borgström, Magnus LU ; Wallentin, Jesper LU ; Kawaguchi, Kenichi ; Samuelson, Lars LU and Deppert, Knut LU
(2011)
In Chemical Physics Letters
502(4-6).
p.222-224
- Abstract
- We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1882662
- author
- Borgström, Magnus
LU
; Wallentin, Jesper
LU
; Kawaguchi, Kenichi
; Samuelson, Lars
LU
and Deppert, Knut
LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Chemical Physics Letters
- volume
- 502
- issue
- 4-6
- pages
- 222 - 224
- publisher
- Elsevier
- external identifiers
-
- wos:000286417800018
- scopus:78751649016
- ISSN
- 0009-2614
- DOI
- 10.1016/j.cplett.2010.12.061
- language
- English
- LU publication?
- yes
- id
- 77e7b5a1-860e-49f0-975d-9272b8606294 (old id 1882662)
- date added to LUP
- 2016-04-01 15:04:21
- date last changed
- 2023-10-30 09:47:25
@article{77e7b5a1-860e-49f0-975d-9272b8606294,
abstract = {{We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.}},
author = {{Borgström, Magnus and Wallentin, Jesper and Kawaguchi, Kenichi and Samuelson, Lars and Deppert, Knut}},
issn = {{0009-2614}},
language = {{eng}},
number = {{4-6}},
pages = {{222--224}},
publisher = {{Elsevier}},
series = {{Chemical Physics Letters}},
title = {{Dynamics of extremely anisotropic etching of InP nanowires by HCl}},
url = {{http://dx.doi.org/10.1016/j.cplett.2010.12.061}},
doi = {{10.1016/j.cplett.2010.12.061}},
volume = {{502}},
year = {{2011}},
}