Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Picosecond time-resolved x-ray refectivity of a laser-heated amorphous carbon film

Nüske, Ralf LU ; Jurgilaitis, Andrius LU ; Enquist, H. ; Farahani, S. Dastjani ; Gaudin, J. ; Guerin, L. ; Harb, Maher LU ; von Korff, C. ; Stoermer, M. and Wulff, M. , et al. (2011) In Applied Physics Letters 98(10).
Abstract
We demonstrate thin film x-ray reflectivity measurements with picosecond time resolution. Amorphous carbon films with a thickness of 46 nm were excited with laser pulses characterized by 100 fs duration, a wavelength of 800 nm, and a fluence of 70 mJ/cm(2). The laser-induced stress caused a rapid expansion of the thin film followed by a relaxation of the film thickness as heat diffused into the silicon substrate. We were able to measure changes in film thickness as small as 0.2 nm. The relaxation dynamics are consistent with a model which accounts for carrier-enhanced substrate heat diffusivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562967]
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and , et al. (More)
; ; ; ; ; ; ; ; ; and (Less)
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
98
issue
10
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000288277200022
  • scopus:79952662145
ISSN
0003-6951
DOI
10.1063/1.3562967
language
English
LU publication?
yes
id
26c3f8b1-7bfb-45dc-820d-ac3fcc201dec (old id 1936354)
date added to LUP
2016-04-01 10:28:11
date last changed
2022-04-27 22:25:16
@article{26c3f8b1-7bfb-45dc-820d-ac3fcc201dec,
  abstract     = {{We demonstrate thin film x-ray reflectivity measurements with picosecond time resolution. Amorphous carbon films with a thickness of 46 nm were excited with laser pulses characterized by 100 fs duration, a wavelength of 800 nm, and a fluence of 70 mJ/cm(2). The laser-induced stress caused a rapid expansion of the thin film followed by a relaxation of the film thickness as heat diffused into the silicon substrate. We were able to measure changes in film thickness as small as 0.2 nm. The relaxation dynamics are consistent with a model which accounts for carrier-enhanced substrate heat diffusivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562967]}},
  author       = {{Nüske, Ralf and Jurgilaitis, Andrius and Enquist, H. and Farahani, S. Dastjani and Gaudin, J. and Guerin, L. and Harb, Maher and von Korff, C. and Stoermer, M. and Wulff, M. and Larsson, Jörgen}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{10}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Picosecond time-resolved x-ray refectivity of a laser-heated amorphous carbon film}},
  url          = {{http://dx.doi.org/10.1063/1.3562967}},
  doi          = {{10.1063/1.3562967}},
  volume       = {{98}},
  year         = {{2011}},
}