A 65nm CMOS 282uW 915MHz direct conversion receiver front-end
(2011) IEEE European Solid State Circuits Conference, ESSCIRC 2011 p.547-550- Abstract
- Abstract in Undetermined
This paper presents an inductorless ultra-low power radio receiver front-end intended for applications such as sensor networks and medical implants. It consists of low noise amplifier, quadrature mixer, and a frequency divider for the generation of quadrature local oscillator signals. The power consumption is just 282μW from a 0.9V supply when it operates in the 915 MHz ISM band It achieves a total gain of 30dB and a noise figure below 9dB. Manufactured in 65nm CMOS, the active area is 0.016mm2. In a 200Ω environment it achieves a -17dB S11 without any external matching network.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1973819
- author
- Bryant, Carl LU and Sjöland, Henrik LU
- organization
- publishing date
- 2011
- type
- Contribution to conference
- publication status
- published
- subject
- pages
- 4 pages
- conference name
- IEEE European Solid State Circuits Conference, ESSCIRC 2011
- conference location
- Helsinki, Finland
- conference dates
- 2011-09-12 - 2011-09-16
- project
- EIT_UPD Wireless Communication for Ultra Portable Devices
- language
- English
- LU publication?
- yes
- id
- 83c9191c-c827-4ef5-beab-1a843837f32d (old id 1973819)
- date added to LUP
- 2016-04-04 14:28:38
- date last changed
- 2021-03-22 15:00:48
@misc{83c9191c-c827-4ef5-beab-1a843837f32d, abstract = {{Abstract in Undetermined<br/>This paper presents an inductorless ultra-low power radio receiver front-end intended for applications such as sensor networks and medical implants. It consists of low noise amplifier, quadrature mixer, and a frequency divider for the generation of quadrature local oscillator signals. The power consumption is just 282μW from a 0.9V supply when it operates in the 915 MHz ISM band It achieves a total gain of 30dB and a noise figure below 9dB. Manufactured in 65nm CMOS, the active area is 0.016mm2. In a 200Ω environment it achieves a -17dB S11 without any external matching network.}}, author = {{Bryant, Carl and Sjöland, Henrik}}, language = {{eng}}, pages = {{547--550}}, title = {{A 65nm CMOS 282uW 915MHz direct conversion receiver front-end}}, year = {{2011}}, }