Fabrication and characterization of AlP-GaP core-shell nanowires
(2011) In Journal of Crystal Growth 324(1). p.290-295- Abstract
- We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2029001
- author
- Borgström, Magnus LU ; Mergenthaler, Kilian LU ; Messing, Maria LU ; Håkanson, Ulf LU ; Wallentin, Jesper LU ; Samuelson, Lars LU and Pistol, Mats-Erik LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanostructures, Crystal structure, Low press, Metalorganic vapor phase, epitaxy, Nanomaterials, Semiconducting aluminum compounds, Semiconducting III-V materials
- in
- Journal of Crystal Growth
- volume
- 324
- issue
- 1
- pages
- 290 - 295
- publisher
- Elsevier
- external identifiers
-
- wos:000292362600051
- scopus:79957838334
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2011.03.055
- language
- English
- LU publication?
- yes
- id
- e3b64474-886c-4e72-a2c2-ca47cd2bf6ca (old id 2029001)
- date added to LUP
- 2016-04-01 13:34:00
- date last changed
- 2023-09-03 01:35:33
@article{e3b64474-886c-4e72-a2c2-ca47cd2bf6ca, abstract = {{We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.}}, author = {{Borgström, Magnus and Mergenthaler, Kilian and Messing, Maria and Håkanson, Ulf and Wallentin, Jesper and Samuelson, Lars and Pistol, Mats-Erik}}, issn = {{0022-0248}}, keywords = {{Nanostructures; Crystal structure; Low press; Metalorganic vapor phase; epitaxy; Nanomaterials; Semiconducting aluminum compounds; Semiconducting III-V materials}}, language = {{eng}}, number = {{1}}, pages = {{290--295}}, publisher = {{Elsevier}}, series = {{Journal of Crystal Growth}}, title = {{Fabrication and characterization of AlP-GaP core-shell nanowires}}, url = {{http://dx.doi.org/10.1016/j.jcrysgro.2011.03.055}}, doi = {{10.1016/j.jcrysgro.2011.03.055}}, volume = {{324}}, year = {{2011}}, }