Characterization of oxygen dimer-enriched silicon detectors
(2005) In Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment 552(1-2). p.49-55- Abstract
- Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/216455
- author
- Boisvert, V ; Lindström, Lennart LU ; Moll, M ; Murin, L I and Pintilie, I
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- irradiation, electron, oxygen dimer, silicon detector, radiation hardness, FTIR, proton irradiation
- in
- Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
- volume
- 552
- issue
- 1-2
- pages
- 49 - 55
- publisher
- Elsevier
- external identifiers
-
- wos:000232867600008
- scopus:26444503139
- ISSN
- 0167-5087
- DOI
- 10.1016/j.nima.2005.06.005
- language
- English
- LU publication?
- yes
- id
- b7af92b1-06e9-4f2f-a9ec-5fb08a2fd7f5 (old id 216455)
- date added to LUP
- 2016-04-01 16:08:11
- date last changed
- 2022-01-28 17:33:37
@article{b7af92b1-06e9-4f2f-a9ec-5fb08a2fd7f5, abstract = {{Various types of silicon material and silicon p(+)n diodes have been treated to increase the concentration of the oxygen dimer (02) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 degrees C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.}}, author = {{Boisvert, V and Lindström, Lennart and Moll, M and Murin, L I and Pintilie, I}}, issn = {{0167-5087}}, keywords = {{irradiation; electron; oxygen dimer; silicon detector; radiation hardness; FTIR; proton irradiation}}, language = {{eng}}, number = {{1-2}}, pages = {{49--55}}, publisher = {{Elsevier}}, series = {{Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment}}, title = {{Characterization of oxygen dimer-enriched silicon detectors}}, url = {{http://dx.doi.org/10.1016/j.nima.2005.06.005}}, doi = {{10.1016/j.nima.2005.06.005}}, volume = {{552}}, year = {{2005}}, }