A new understanding of au-assisted growth of III-V semiconductor nanowires
(2005) In Advanced Functional Materials 15(10). p.1603-1610- Abstract
- Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs,... (More)
- Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature-dependent interaction with Au. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/216739
- author
- Dick Thelander, Kimberly LU ; Deppert, Knut LU ; Karlsson, Lisa LU ; Wallenberg, Reine LU ; Samuelson, Lars LU and Seifert, Werner LU
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Advanced Functional Materials
- volume
- 15
- issue
- 10
- pages
- 1603 - 1610
- publisher
- Wiley-Blackwell
- external identifiers
-
- wos:000232761500006
- scopus:26844475917
- ISSN
- 1616-3028
- DOI
- 10.1002/adfm.200500157
- language
- English
- LU publication?
- yes
- id
- 27d4aae8-2f2b-4da2-b46b-3ff35b1876f5 (old id 216739)
- date added to LUP
- 2016-04-01 12:36:42
- date last changed
- 2022-04-21 17:49:35
@article{27d4aae8-2f2b-4da2-b46b-3ff35b1876f5, abstract = {{Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature-dependent interaction with Au.}}, author = {{Dick Thelander, Kimberly and Deppert, Knut and Karlsson, Lisa and Wallenberg, Reine and Samuelson, Lars and Seifert, Werner}}, issn = {{1616-3028}}, language = {{eng}}, number = {{10}}, pages = {{1603--1610}}, publisher = {{Wiley-Blackwell}}, series = {{Advanced Functional Materials}}, title = {{A new understanding of au-assisted growth of III-V semiconductor nanowires}}, url = {{http://dx.doi.org/10.1002/adfm.200500157}}, doi = {{10.1002/adfm.200500157}}, volume = {{15}}, year = {{2005}}, }