Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires
(2005) In Nano Letters 5(10). p.1943-1947- Abstract
- We have synthesized GaAs-GaxIn1-xP (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/218572
- author
- Sköld, Niklas LU ; Karlsson, Lisa LU ; Larsson, Magnus LU ; Pistol, Mats-Erik LU ; Seifert, Werner LU ; Trägårdh, Johanna LU and Samuelson, Lars LU
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 5
- issue
- 10
- pages
- 1943 - 1947
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000232623700016
- pmid:16218714
- scopus:27544477765
- ISSN
- 1530-6992
- DOI
- 10.1021/nl051304s
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 3838b44a-746f-415b-831e-758b5f9b5a5a (old id 218572)
- date added to LUP
- 2016-04-01 16:44:54
- date last changed
- 2022-03-31 11:06:56
@article{3838b44a-746f-415b-831e-758b5f9b5a5a, abstract = {{We have synthesized GaAs-GaxIn1-xP (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.}}, author = {{Sköld, Niklas and Karlsson, Lisa and Larsson, Magnus and Pistol, Mats-Erik and Seifert, Werner and Trägårdh, Johanna and Samuelson, Lars}}, issn = {{1530-6992}}, language = {{eng}}, number = {{10}}, pages = {{1943--1947}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires}}, url = {{http://dx.doi.org/10.1021/nl051304s}}, doi = {{10.1021/nl051304s}}, volume = {{5}}, year = {{2005}}, }