The Monte Carlo method applied to carrier transport in Si/SiGe quantum wells
(2005) In International Journal of Modern Physics B 19(21). p.3353-3377- Abstract
- We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/224148
- author
- Vettchinkina, Valeria LU ; Blom, Anders LU and Odnoblyudov, M A
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- distribution function, electron transport, quantum well, Monte Carlo method, SiGe, scattering, two-dimensional electron gas
- in
- International Journal of Modern Physics B
- volume
- 19
- issue
- 21
- pages
- 3353 - 3377
- publisher
- World Scientific Publishing
- external identifiers
-
- wos:000231886100003
- scopus:24044450881
- ISSN
- 0217-9792
- DOI
- 10.1142/S021797920503222X
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Mathematical Physics (Faculty of Technology) (011040002), Department of Physics (011013000)
- id
- 68c93b0d-e08f-488a-aa16-b46b414be607 (old id 224148)
- date added to LUP
- 2016-04-01 17:05:58
- date last changed
- 2022-01-29 00:22:58
@article{68c93b0d-e08f-488a-aa16-b46b414be607, abstract = {{We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.}}, author = {{Vettchinkina, Valeria and Blom, Anders and Odnoblyudov, M A}}, issn = {{0217-9792}}, keywords = {{distribution function; electron transport; quantum well; Monte Carlo method; SiGe; scattering; two-dimensional electron gas}}, language = {{eng}}, number = {{21}}, pages = {{3353--3377}}, publisher = {{World Scientific Publishing}}, series = {{International Journal of Modern Physics B}}, title = {{The Monte Carlo method applied to carrier transport in Si/SiGe quantum wells}}, url = {{http://dx.doi.org/10.1142/S021797920503222X}}, doi = {{10.1142/S021797920503222X}}, volume = {{19}}, year = {{2005}}, }