Strain effects on individual quantum dots: Dependence of cap layer thickness
(2005) In Physical Review B (Condensed Matter and Materials Physics) 72(8).- Abstract
- We have studied the effects of strain on individual self-assembled quantum dots (QDs) exemplified by InP dots embedded in GaInP. The quantum dot sample was etched from the top and in this way the amount of capping material was reduced. In a sequence of etch cycles, the cap layer was thinned, and the photoluminescence from several individual QDs could be followed as a function of cap layer thickness. The evolution of the emission spectra clearly depended on the quantum dot size. We interpret this as arising from differences in the aspect ratio for quantum dots of different sizes. The influence of the capping layer, for different QD geometries, was modeled using deformation potential theory with the strain calculated using a full... (More)
- We have studied the effects of strain on individual self-assembled quantum dots (QDs) exemplified by InP dots embedded in GaInP. The quantum dot sample was etched from the top and in this way the amount of capping material was reduced. In a sequence of etch cycles, the cap layer was thinned, and the photoluminescence from several individual QDs could be followed as a function of cap layer thickness. The evolution of the emission spectra clearly depended on the quantum dot size. We interpret this as arising from differences in the aspect ratio for quantum dots of different sizes. The influence of the capping layer, for different QD geometries, was modeled using deformation potential theory with the strain calculated using a full three-dimensional linear elasticity model. The results agree well with the experimental observations. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/224782
- author
- Persson, Jonas LU ; Håkanson, Ulf LU ; Johansson, Mikael LU ; Samuelson, Lars LU and Pistol, Mats-Erik LU
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 72
- issue
- 8
- article number
- 085302
- publisher
- American Physical Society
- external identifiers
-
- wos:000231564600082
- scopus:27144478600
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.72.085302
- language
- English
- LU publication?
- yes
- id
- 62eadb81-a8da-4c9b-a8c1-0db46259cf29 (old id 224782)
- date added to LUP
- 2016-04-01 15:55:01
- date last changed
- 2022-03-31 11:05:50
@article{62eadb81-a8da-4c9b-a8c1-0db46259cf29,
abstract = {{We have studied the effects of strain on individual self-assembled quantum dots (QDs) exemplified by InP dots embedded in GaInP. The quantum dot sample was etched from the top and in this way the amount of capping material was reduced. In a sequence of etch cycles, the cap layer was thinned, and the photoluminescence from several individual QDs could be followed as a function of cap layer thickness. The evolution of the emission spectra clearly depended on the quantum dot size. We interpret this as arising from differences in the aspect ratio for quantum dots of different sizes. The influence of the capping layer, for different QD geometries, was modeled using deformation potential theory with the strain calculated using a full three-dimensional linear elasticity model. The results agree well with the experimental observations.}},
author = {{Persson, Jonas and Håkanson, Ulf and Johansson, Mikael and Samuelson, Lars and Pistol, Mats-Erik}},
issn = {{1098-0121}},
language = {{eng}},
number = {{8}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Strain effects on individual quantum dots: Dependence of cap layer thickness}},
url = {{http://dx.doi.org/10.1103/PhysRevB.72.085302}},
doi = {{10.1103/PhysRevB.72.085302}},
volume = {{72}},
year = {{2005}},
}