Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
(2012) In ACS Nano 6(4). p.3109-3113- Abstract
- We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2431879
- author
- Ganjipour, Bahram LU ; Wallentin, Jesper LU ; Borgström, Magnus LU ; Samuelson, Lars LU and Thelander, Claes LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- ACS Nano
- volume
- 6
- issue
- 4
- pages
- 3109 - 3113
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000303099300028
- pmid:22414204
- scopus:84860364658
- pmid:22414204
- ISSN
- 1936-086X
- DOI
- 10.1021/nn204838m
- language
- English
- LU publication?
- yes
- id
- 1c0d7997-8500-44c4-b7ed-01837d5c85e7 (old id 2431879)
- date added to LUP
- 2016-04-01 10:03:33
- date last changed
- 2023-11-09 10:43:40
@article{1c0d7997-8500-44c4-b7ed-01837d5c85e7, abstract = {{We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.}}, author = {{Ganjipour, Bahram and Wallentin, Jesper and Borgström, Magnus and Samuelson, Lars and Thelander, Claes}}, issn = {{1936-086X}}, language = {{eng}}, number = {{4}}, pages = {{3109--3113}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Nano}}, title = {{Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.}}, url = {{http://dx.doi.org/10.1021/nn204838m}}, doi = {{10.1021/nn204838m}}, volume = {{6}}, year = {{2012}}, }