GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence
(2011) 17th International Conference on Microscopy of Semiconducting Materials 326. p.012042-012042- Abstract
- We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several mu m. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GaInAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2494154
- author
- Gustafsson, Anders LU ; Bolinsson, Jessica LU ; Ek, Martin LU and Samuelson, Lars LU
- organization
- publishing date
- 2011
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Journal of Physics: Conference Series
- volume
- 326
- pages
- 012042 - 012042
- publisher
- American Institute of Physics (AIP)
- conference name
- 17th International Conference on Microscopy of Semiconducting Materials
- conference dates
- 2011-04-04 - 2011-04-07
- external identifiers
-
- wos:000298668400042
- scopus:82955242421
- ISSN
- 1742-6596
- 1742-6588
- DOI
- 10.1088/1742-6596/326/1/012042
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- be147811-7ec7-46f6-8313-ae3f19282020 (old id 2494154)
- date added to LUP
- 2016-04-01 10:05:36
- date last changed
- 2024-01-06 07:21:36
@inproceedings{be147811-7ec7-46f6-8313-ae3f19282020, abstract = {{We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several mu m. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GaInAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.}}, author = {{Gustafsson, Anders and Bolinsson, Jessica and Ek, Martin and Samuelson, Lars}}, booktitle = {{Journal of Physics: Conference Series}}, issn = {{1742-6596}}, language = {{eng}}, pages = {{012042--012042}}, publisher = {{American Institute of Physics (AIP)}}, title = {{GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence}}, url = {{http://dx.doi.org/10.1088/1742-6596/326/1/012042}}, doi = {{10.1088/1742-6596/326/1/012042}}, volume = {{326}}, year = {{2011}}, }