Silicon intercalation into the graphene-SiC interface
(2012) In Physical Review B (Condensed Matter and Materials Physics) 85(16).- Abstract
- In this work we use low-energy electron microscopy, x-ray photoemission electron microscopy, and x-ray photoelectron spectroscopy to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000 (1) over bar) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020 degrees C. In a sequence of depositions, we have been able to intercalate similar to 6 ML of Si into the graphene-SiC interface.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2563337
- author
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 85
- issue
- 16
- article number
- 165449
- publisher
- American Physical Society
- external identifiers
-
- wos:000303387600007
- scopus:84860425785
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.85.165449
- language
- English
- LU publication?
- yes
- id
- df3cf6e0-7c6a-43dc-9695-e3f1449e62c3 (old id 2563337)
- date added to LUP
- 2016-04-01 14:44:38
- date last changed
- 2022-03-14 07:32:42
@article{df3cf6e0-7c6a-43dc-9695-e3f1449e62c3, abstract = {{In this work we use low-energy electron microscopy, x-ray photoemission electron microscopy, and x-ray photoelectron spectroscopy to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000 (1) over bar) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020 degrees C. In a sequence of depositions, we have been able to intercalate similar to 6 ML of Si into the graphene-SiC interface.}}, author = {{Wang, F. and Shepperd, K. and Hicks, J. and Nevius, M. S. and Tinkey, H. and Tejeda, A. and Taleb-Ibrahimi, A. and Bertran, F. and Le Fevre, P. and Torrance, D. B. and First, P. N. and de Heer, W. A. and Zakharov, Alexei and Conrad, E. H.}}, issn = {{1098-0121}}, language = {{eng}}, number = {{16}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Silicon intercalation into the graphene-SiC interface}}, url = {{http://dx.doi.org/10.1103/PhysRevB.85.165449}}, doi = {{10.1103/PhysRevB.85.165449}}, volume = {{85}}, year = {{2012}}, }