Growth of GaP nanotree structures by sequential seeding of 1D nanowires
Dick Thelander, Kimberly LU ; Deppert, Knut LU
; Mårtensson, Thomas
LU
; Seifert, Werner
LU
and Samuelson, Lars
LU
(2004)
In Journal of Crystal Growth
272(1-4).
p.131-137
- Abstract
- Complex nanostructures are becoming increasingly important for the development of nanoscale devices and functional nanomaterials. Precise control of size and morphology of these structures is critical to their fabrication and exploitation. We have developed a method for stepwise growth of tree-like nanostructures via the vapour liquid-solid (VLS) growth mode, demonstrated for III-V semiconductor materials. This method uses the initial seeding of nanowires by catalytic aerosol nanoparticles to form the trunk, followed by sequential seeding of branching structures. Here we present a detailed study of the growth of these complex structures using Gap. Diameter of each level of nanowires is directly determined by seed particle diameters, and... (More)
- Complex nanostructures are becoming increasingly important for the development of nanoscale devices and functional nanomaterials. Precise control of size and morphology of these structures is critical to their fabrication and exploitation. We have developed a method for stepwise growth of tree-like nanostructures via the vapour liquid-solid (VLS) growth mode, demonstrated for III-V semiconductor materials. This method uses the initial seeding of nanowires by catalytic aerosol nanoparticles to form the trunk, followed by sequential seeding of branching structures. Here we present a detailed study of the growth of these complex structures using Gap. Diameter of each level of nanowires is directly determined by seed particle diameters, and number of branches is determined by seed particle density. Growth rate is shown to increase with temperature to a maximum corresponding to the temperature of complete decomposition of the Group-III precursor material, and subsequently decrease due to competition with bulk growth. Growth rate also depends on flow of the Group-III precursor, but not on the Group-V precursor. Finally, there is a relationship between the number of branches and their growth rate, suggesting that material diffusion plays a role in nanowire branch growth. (C) 2004 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/258422
- author
- Dick Thelander, Kimberly
LU
; Deppert, Knut
LU
; Mårtensson, Thomas
LU
; Seifert, Werner
LU
and Samuelson, Lars
LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- semiconducting III-V, structures, metalorganic vapor phase epitaxy, materials
- in
- Journal of Crystal Growth
- volume
- 272
- issue
- 1-4
- pages
- 131 - 137
- publisher
- Elsevier
- external identifiers
-
- wos:000225890300023
- scopus:9944247497
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2004.09.004
- language
- English
- LU publication?
- yes
- id
- 9188f766-70dd-48a6-b0cb-a967ef58a4aa (old id 258422)
- date added to LUP
- 2016-04-01 16:54:26
- date last changed
- 2022-03-22 22:02:27
@article{9188f766-70dd-48a6-b0cb-a967ef58a4aa,
abstract = {{Complex nanostructures are becoming increasingly important for the development of nanoscale devices and functional nanomaterials. Precise control of size and morphology of these structures is critical to their fabrication and exploitation. We have developed a method for stepwise growth of tree-like nanostructures via the vapour liquid-solid (VLS) growth mode, demonstrated for III-V semiconductor materials. This method uses the initial seeding of nanowires by catalytic aerosol nanoparticles to form the trunk, followed by sequential seeding of branching structures. Here we present a detailed study of the growth of these complex structures using Gap. Diameter of each level of nanowires is directly determined by seed particle diameters, and number of branches is determined by seed particle density. Growth rate is shown to increase with temperature to a maximum corresponding to the temperature of complete decomposition of the Group-III precursor material, and subsequently decrease due to competition with bulk growth. Growth rate also depends on flow of the Group-III precursor, but not on the Group-V precursor. Finally, there is a relationship between the number of branches and their growth rate, suggesting that material diffusion plays a role in nanowire branch growth. (C) 2004 Elsevier B.V. All rights reserved.}},
author = {{Dick Thelander, Kimberly and Deppert, Knut and Mårtensson, Thomas and Seifert, Werner and Samuelson, Lars}},
issn = {{0022-0248}},
keywords = {{semiconducting III-V; structures; metalorganic vapor phase epitaxy; materials}},
language = {{eng}},
number = {{1-4}},
pages = {{131--137}},
publisher = {{Elsevier}},
series = {{Journal of Crystal Growth}},
title = {{Growth of GaP nanotree structures by sequential seeding of 1D nanowires}},
url = {{http://dx.doi.org/10.1016/j.jcrysgro.2004.09.004}},
doi = {{10.1016/j.jcrysgro.2004.09.004}},
volume = {{272}},
year = {{2004}},
}