Role of surface diffusion in chemical beam epitaxy of InAs nanowires
(2004) In Nano Letters 4(10). p.1961-1964- Abstract
- We present growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on InAs (111)B substrates. The nanowires are grown in a chemical beam epitaxy system and exhibit high aspect ratios and high homogeneity in length and width. Investigations of wire growth rate as a function of diameter, density, and time were performed and the results indicate that 80% of the growth is due to In species diffusing from the (111)B substrate surface. Furthermore, we have established that the diffusion length on the {110} wire side surfaces exceeds 10 mum. We also observe a decreasing length growth rate with increasing wire diameter.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/263684
- author
- Jensen, Linus ; Björk, Mikael LU ; Jeppesen, Sören LU ; Persson, Ann LU ; Ohlsson, Jonas LU and Samuelson, Lars LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 4
- issue
- 10
- pages
- 1961 - 1964
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000224514800027
- scopus:7544245915
- ISSN
- 1530-6992
- DOI
- 10.1021/nl048825k
- language
- English
- LU publication?
- yes
- id
- daaac1c0-c46e-4d4a-afd9-78863307b161 (old id 263684)
- date added to LUP
- 2016-04-01 16:16:45
- date last changed
- 2022-04-07 07:03:57
@article{daaac1c0-c46e-4d4a-afd9-78863307b161, abstract = {{We present growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on InAs (111)B substrates. The nanowires are grown in a chemical beam epitaxy system and exhibit high aspect ratios and high homogeneity in length and width. Investigations of wire growth rate as a function of diameter, density, and time were performed and the results indicate that 80% of the growth is due to In species diffusing from the (111)B substrate surface. Furthermore, we have established that the diffusion length on the {110} wire side surfaces exceeds 10 mum. We also observe a decreasing length growth rate with increasing wire diameter.}}, author = {{Jensen, Linus and Björk, Mikael and Jeppesen, Sören and Persson, Ann and Ohlsson, Jonas and Samuelson, Lars}}, issn = {{1530-6992}}, language = {{eng}}, number = {{10}}, pages = {{1961--1964}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Role of surface diffusion in chemical beam epitaxy of InAs nanowires}}, url = {{http://dx.doi.org/10.1021/nl048825k}}, doi = {{10.1021/nl048825k}}, volume = {{4}}, year = {{2004}}, }