InP quantum dots in GaInP
(2004) In Journal of Physics: Condensed Matter 16(35). p.3737-3748- Abstract
- InP quantum dots grown on GaInP by the Stranski-Krastanow technique are less well studied than InAs quantum dots grown on GaAs. We here give a review of the main experimental evidence for the InP dots being charged when grown in between n-type barriers.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/265294
- author
- Pistol, Mats-Erik LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Physics: Condensed Matter
- volume
- 16
- issue
- 35
- pages
- 3737 - 3748
- publisher
- IOP Publishing
- external identifiers
-
- wos:000224196200016
- scopus:4544322883
- ISSN
- 1361-648X
- DOI
- 10.1088/0953-8984/16/35/015
- language
- English
- LU publication?
- yes
- id
- 91f20c65-3b8d-468a-ae10-11a822da5ebc (old id 265294)
- date added to LUP
- 2016-04-01 16:36:37
- date last changed
- 2022-03-31 11:06:53
@article{91f20c65-3b8d-468a-ae10-11a822da5ebc,
abstract = {{InP quantum dots grown on GaInP by the Stranski-Krastanow technique are less well studied than InAs quantum dots grown on GaAs. We here give a review of the main experimental evidence for the InP dots being charged when grown in between n-type barriers.}},
author = {{Pistol, Mats-Erik}},
issn = {{1361-648X}},
language = {{eng}},
number = {{35}},
pages = {{3737--3748}},
publisher = {{IOP Publishing}},
series = {{Journal of Physics: Condensed Matter}},
title = {{InP quantum dots in GaInP}},
url = {{http://dx.doi.org/10.1088/0953-8984/16/35/015}},
doi = {{10.1088/0953-8984/16/35/015}},
volume = {{16}},
year = {{2004}},
}