RHEED and RD studies of III-V semiconductors
(1996)- Abstract
- The published papers and introductory part of this thesis concentrate on the in-situ characterization of (001) surfaces of GaAs, InAs, InP and GaP. The experimental tools used in these studies were a chemical beam epitaxy (CBE) machine equipped with a reflection high energy electron (RHEED) system and a reflectance difference (RD) optical set-up. In some studies also a reflectance difference spectroscopy (RDS) system, for the spectral characterization of surface phases was used. The optical technique has been correlated with the electron diffraction technique both for the determination and study of surface phases and for the real time dynamic studies of growing and relaxing surfaces. The monolayer growth oscillations of RHEED and RD are... (More)
- The published papers and introductory part of this thesis concentrate on the in-situ characterization of (001) surfaces of GaAs, InAs, InP and GaP. The experimental tools used in these studies were a chemical beam epitaxy (CBE) machine equipped with a reflection high energy electron (RHEED) system and a reflectance difference (RD) optical set-up. In some studies also a reflectance difference spectroscopy (RDS) system, for the spectral characterization of surface phases was used. The optical technique has been correlated with the electron diffraction technique both for the determination and study of surface phases and for the real time dynamic studies of growing and relaxing surfaces. The monolayer growth oscillations of RHEED and RD are compared and discussed. Specific work has been done in the field of epitaxial precursor reactions with surfaces where activation energies for decomposition and desorption could be determined from Arrhenius plots . Further the thesis contains work on the optimization of pseudomorphic InGaAs QW’s in GaAs and InAs, and InP dot growth in GaP. Other techniques which have been used for post-growth characterization include atomic force microscopy (AFM) and photoluminescence spectroscopy (PL). (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/28569
- author
- Junno, Bert
- supervisor
- opponent
-
- Prof. Sakaki, Hiroyuki, Tokyo University
- publishing date
- 1996
- type
- Thesis
- publication status
- published
- subject
- keywords
- reflectance anisotropy, reflectance difference, RHEED, reflection high energy electron diffraction, III-V semiconductors, GaP, GaAs, InP, InAs, reflection high energy electron diffraction (RHEED), reflectance difference (RD), phase diagrams, surface reconstructions, Fysicumarkivet A:1996:Junno, Halvledarfysik, CBE GaAs, Semiconductory physics, chemical beam epitaxy, surface phase diagrams, RDS, RD, RAS
- pages
- 36 pages
- publisher
- Solid State Physics
- defense location
- Sal B Physics department, Lund
- defense date
- 1996-05-31 10:15:00
- external identifiers
-
- other:LUFTD2/(TFFF-0042)/1-126
- ISBN
- 91-628-2058-3
- language
- English
- LU publication?
- no
- id
- d51a7184-bac7-446a-8b7b-4b435d1f9a93 (old id 28569)
- date added to LUP
- 2016-04-04 10:48:10
- date last changed
- 2018-11-21 21:00:51
@phdthesis{d51a7184-bac7-446a-8b7b-4b435d1f9a93, abstract = {{The published papers and introductory part of this thesis concentrate on the in-situ characterization of (001) surfaces of GaAs, InAs, InP and GaP. The experimental tools used in these studies were a chemical beam epitaxy (CBE) machine equipped with a reflection high energy electron (RHEED) system and a reflectance difference (RD) optical set-up. In some studies also a reflectance difference spectroscopy (RDS) system, for the spectral characterization of surface phases was used. The optical technique has been correlated with the electron diffraction technique both for the determination and study of surface phases and for the real time dynamic studies of growing and relaxing surfaces. The monolayer growth oscillations of RHEED and RD are compared and discussed. Specific work has been done in the field of epitaxial precursor reactions with surfaces where activation energies for decomposition and desorption could be determined from Arrhenius plots . Further the thesis contains work on the optimization of pseudomorphic InGaAs QW’s in GaAs and InAs, and InP dot growth in GaP. Other techniques which have been used for post-growth characterization include atomic force microscopy (AFM) and photoluminescence spectroscopy (PL).}}, author = {{Junno, Bert}}, isbn = {{91-628-2058-3}}, keywords = {{reflectance anisotropy; reflectance difference; RHEED; reflection high energy electron diffraction; III-V semiconductors; GaP; GaAs; InP; InAs; reflection high energy electron diffraction (RHEED); reflectance difference (RD); phase diagrams; surface reconstructions; Fysicumarkivet A:1996:Junno; Halvledarfysik; CBE GaAs; Semiconductory physics; chemical beam epitaxy; surface phase diagrams; RDS; RD; RAS}}, language = {{eng}}, publisher = {{Solid State Physics}}, title = {{RHEED and RD studies of III-V semiconductors}}, year = {{1996}}, }