Electric field effects in single semiconductor quantum dots observed by scanning tunneling luminescence
(2003) In Journal of Vacuum Science and Technology B 21(6). p.2344-2347- Abstract
- Scanning tunneling microscopy (STM) and scanning tunneling luminescence were used to correlate the topography with the emission spectra from individual self-assembled, InP quantum dots (QDs). We have investigated in detail how the electric field induced by the STM tip affects the emission from the QDs. This was done when exciting a QD, by altering the bias for constant current, by altering the current for constant bias, or by changing the tip position. An increased bias (increased electric field) leads to Stark shift of the QD emission, whereas a larger tunneling current results in state filling of the emission. Furthermore, when exciting the QD, the position of the STM tip is shown to have large effects on the QD luminescence.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/289667
- author
- Håkanson, Ulf LU ; Hakanson, H ; Johansson, Mikael LU ; Samuelson, Lars LU and Pistol, Mats-Erik LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Vacuum Science and Technology B
- volume
- 21
- issue
- 6
- pages
- 2344 - 2347
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000188193600012
- scopus:0942267569
- ISSN
- 1520-8567
- DOI
- 10.1116/1.1620511
- language
- English
- LU publication?
- yes
- id
- f9a29146-b9ae-4db5-abab-69a39e8aff1f (old id 289667)
- date added to LUP
- 2016-04-01 11:43:23
- date last changed
- 2022-03-31 11:02:40
@article{f9a29146-b9ae-4db5-abab-69a39e8aff1f, abstract = {{Scanning tunneling microscopy (STM) and scanning tunneling luminescence were used to correlate the topography with the emission spectra from individual self-assembled, InP quantum dots (QDs). We have investigated in detail how the electric field induced by the STM tip affects the emission from the QDs. This was done when exciting a QD, by altering the bias for constant current, by altering the current for constant bias, or by changing the tip position. An increased bias (increased electric field) leads to Stark shift of the QD emission, whereas a larger tunneling current results in state filling of the emission. Furthermore, when exciting the QD, the position of the STM tip is shown to have large effects on the QD luminescence.}}, author = {{Håkanson, Ulf and Hakanson, H and Johansson, Mikael and Samuelson, Lars and Pistol, Mats-Erik}}, issn = {{1520-8567}}, language = {{eng}}, number = {{6}}, pages = {{2344--2347}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Journal of Vacuum Science and Technology B}}, title = {{Electric field effects in single semiconductor quantum dots observed by scanning tunneling luminescence}}, url = {{http://dx.doi.org/10.1116/1.1620511}}, doi = {{10.1116/1.1620511}}, volume = {{21}}, year = {{2003}}, }