Diffusion-driven current transport to near-surface nanostructures
(2015) 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 p.117-118- Abstract
Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/29d0c811-c9b3-41ba-b105-2e7177eb758c
- author
- Kivisaari, Pyry LU ; Riuttanen, Lauri ; Suihkonen, Sami and Oksanen, Jani
- organization
- publishing date
- 2015-05-10
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Charge carrier processes, Doping, Electric potential, Gallium nitride, Nanostructures, Optimization, Semiconductor process modeling
- host publication
- 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
- article number
- 7292850
- pages
- 2 pages
- publisher
- IEEE Computer Society
- conference name
- 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
- conference location
- Taipei, Taiwan
- conference dates
- 2015-09-07 - 2015-09-11
- external identifiers
-
- scopus:84959189149
- ISBN
- 9781479983797
- DOI
- 10.1109/NUSOD.2015.7292850
- language
- English
- LU publication?
- yes
- id
- 29d0c811-c9b3-41ba-b105-2e7177eb758c
- date added to LUP
- 2016-09-23 12:13:59
- date last changed
- 2022-01-30 06:19:00
@inproceedings{29d0c811-c9b3-41ba-b105-2e7177eb758c, abstract = {{<p>Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.</p>}}, author = {{Kivisaari, Pyry and Riuttanen, Lauri and Suihkonen, Sami and Oksanen, Jani}}, booktitle = {{15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015}}, isbn = {{9781479983797}}, keywords = {{Charge carrier processes; Doping; Electric potential; Gallium nitride; Nanostructures; Optimization; Semiconductor process modeling}}, language = {{eng}}, month = {{05}}, pages = {{117--118}}, publisher = {{IEEE Computer Society}}, title = {{Diffusion-driven current transport to near-surface nanostructures}}, url = {{http://dx.doi.org/10.1109/NUSOD.2015.7292850}}, doi = {{10.1109/NUSOD.2015.7292850}}, year = {{2015}}, }