Electronic properties of grain boundaries in Cu(In,Ga)Se-2 thin films with various Ga-contents
(2012) In Solar Energy Materials and Solar Cells 103. p.86-92- Abstract
- We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from -118 mV to +114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic... (More)
- We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from -118 mV to +114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic properties of GBs and the obtained maximum efficiencies of CIGSe thin film solar cells as a function of the Ga-content. (C) 2012 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3001369
- author
- Baier, Robert ; Lehmann, Jascha ; Lehmann, Sebastian LU ; Rissom, Thorsten ; Kaufmann, Christian Alexander ; Schwarzmann, Alex ; Rosenwaks, Yossi ; Lux-Steiner, Martha Ch. and Sadewasser, Sascha
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- CIGSe, Grain boundaries, KPFM
- in
- Solar Energy Materials and Solar Cells
- volume
- 103
- pages
- 86 - 92
- publisher
- Elsevier
- external identifiers
-
- wos:000306044300014
- scopus:84860641717
- ISSN
- 0927-0248
- DOI
- 10.1016/j.solmat.2012.04.002
- language
- English
- LU publication?
- yes
- id
- 9890e43b-2546-4349-9ba7-f0e462b1efc2 (old id 3001369)
- date added to LUP
- 2016-04-01 14:44:53
- date last changed
- 2022-01-28 02:20:16
@article{9890e43b-2546-4349-9ba7-f0e462b1efc2, abstract = {{We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from -118 mV to +114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic properties of GBs and the obtained maximum efficiencies of CIGSe thin film solar cells as a function of the Ga-content. (C) 2012 Elsevier B.V. All rights reserved.}}, author = {{Baier, Robert and Lehmann, Jascha and Lehmann, Sebastian and Rissom, Thorsten and Kaufmann, Christian Alexander and Schwarzmann, Alex and Rosenwaks, Yossi and Lux-Steiner, Martha Ch. and Sadewasser, Sascha}}, issn = {{0927-0248}}, keywords = {{CIGSe; Grain boundaries; KPFM}}, language = {{eng}}, pages = {{86--92}}, publisher = {{Elsevier}}, series = {{Solar Energy Materials and Solar Cells}}, title = {{Electronic properties of grain boundaries in Cu(In,Ga)Se-2 thin films with various Ga-contents}}, url = {{http://dx.doi.org/10.1016/j.solmat.2012.04.002}}, doi = {{10.1016/j.solmat.2012.04.002}}, volume = {{103}}, year = {{2012}}, }