Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions
(2003) In Applied Physics Letters 83(12). p.2369-2371- Abstract
- The current-voltage (I-V) characteristics of three-terminal ballistic junctions (TBJs) fabricated from high-electron-mobility GaInAs/InP quantum-well structures are measured in the six-terminal configuration. These characteristics show strong nonlinear, diode-like behavior, in agreement with recent theoretical calculations. Furthermore, the I-V characteristics are tunable by the voltage applied directly to one branch of the TBJs acting as a gate. An additional tuning of the characteristics of the TBJ devices can be performed using an in-plane side gate. All the presented characteristics are measured at room temperature, which makes TBJ devices promising for future nanoelectronic applications. (C) 2003 American Institute of Physics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/301477
- author
- Shorubalko, Ivan LU ; Xu, Hongqi LU ; Omling, Pär LU and Samuelson, Lars LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 83
- issue
- 12
- pages
- 2369 - 2371
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000185333200023
- scopus:0142121702
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1605822
- language
- English
- LU publication?
- yes
- id
- be051d59-78b8-48d2-a249-9488f101926a (old id 301477)
- date added to LUP
- 2016-04-01 12:24:25
- date last changed
- 2022-04-05 21:55:02
@article{be051d59-78b8-48d2-a249-9488f101926a, abstract = {{The current-voltage (I-V) characteristics of three-terminal ballistic junctions (TBJs) fabricated from high-electron-mobility GaInAs/InP quantum-well structures are measured in the six-terminal configuration. These characteristics show strong nonlinear, diode-like behavior, in agreement with recent theoretical calculations. Furthermore, the I-V characteristics are tunable by the voltage applied directly to one branch of the TBJs acting as a gate. An additional tuning of the characteristics of the TBJ devices can be performed using an in-plane side gate. All the presented characteristics are measured at room temperature, which makes TBJ devices promising for future nanoelectronic applications. (C) 2003 American Institute of Physics.}}, author = {{Shorubalko, Ivan and Xu, Hongqi and Omling, Pär and Samuelson, Lars}}, issn = {{0003-6951}}, language = {{eng}}, number = {{12}}, pages = {{2369--2371}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions}}, url = {{http://dx.doi.org/10.1063/1.1605822}}, doi = {{10.1063/1.1605822}}, volume = {{83}}, year = {{2003}}, }