Observation of vacancies in Ga1-xMnxAs with positron annihilation spectroscopy
(2003) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 103(6). p.601-606- Abstract
- Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8 mum thick low temperature MBE GaMnAs layers with Mn content 0.5-5% and different As-2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As-2 partial pressure.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/304766
- author
- Tuomisto, F ; Slotte, J ; Saarinen, K and Sadowski, Janusz LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
- volume
- 103
- issue
- 6
- pages
- 601 - 606
- publisher
- Institute of Physics, Polish Academy of Sciences
- external identifiers
-
- wos:000184649200014
- scopus:0042655382
- ISSN
- 0587-4246
- language
- English
- LU publication?
- yes
- id
- 70a54f34-c67b-4248-8b18-21e7680e3b6a (old id 304766)
- alternative location
- http://przyrbwn.icm.edu.pl/APP/ABSTR/103/a103-6-601.html
- date added to LUP
- 2016-04-01 16:57:37
- date last changed
- 2022-04-23 01:43:19
@article{70a54f34-c67b-4248-8b18-21e7680e3b6a, abstract = {{Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8 mum thick low temperature MBE GaMnAs layers with Mn content 0.5-5% and different As-2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As-2 partial pressure.}}, author = {{Tuomisto, F and Slotte, J and Saarinen, K and Sadowski, Janusz}}, issn = {{0587-4246}}, language = {{eng}}, number = {{6}}, pages = {{601--606}}, publisher = {{Institute of Physics, Polish Academy of Sciences}}, series = {{Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics}}, title = {{Observation of vacancies in Ga1-xMnxAs with positron annihilation spectroscopy}}, url = {{http://przyrbwn.icm.edu.pl/APP/ABSTR/103/a103-6-601.html}}, volume = {{103}}, year = {{2003}}, }