From diffusion limited to incorporation limited growth of nanowires
Johansson, Jonas LU
and Magnusson, Martin H.
LU
(2019)
In Journal of Crystal Growth
525.
- Abstract
We propose a model for the axial growth rate of nanowires grown by means of the vapor-liquid-solid mechanism. Our model is based on deposition-desorption-incorporation kinetics in steady state, and using this model we discuss nanowire growth in two experimentally relevant limits: mass transport limited growth and incorporation limited growth. We discuss our modeling results in view of experimental nanowire growth results with a special emphasis on the radius-independent, incorporation limited growth rate in the high pressure limit, observed under specific, extreme conditions of nanowire growth.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/30701580-6334-4561-b9ac-aced404452e8
- author
- Johansson, Jonas
LU
and Magnusson, Martin H.
LU
- organization
- publishing date
- 2019
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- A1. Nanostructures, A3. Vapor phase epitaxy, B1. Nanomaterials, B2. Semiconducting III-V materials
- in
- Journal of Crystal Growth
- volume
- 525
- article number
- 125192
- publisher
- Elsevier
- external identifiers
-
- scopus:85070987670
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2019.125192
- language
- English
- LU publication?
- yes
- id
- 30701580-6334-4561-b9ac-aced404452e8
- date added to LUP
- 2019-09-09 11:10:03
- date last changed
- 2023-11-19 14:15:47
@article{30701580-6334-4561-b9ac-aced404452e8,
abstract = {{<p>We propose a model for the axial growth rate of nanowires grown by means of the vapor-liquid-solid mechanism. Our model is based on deposition-desorption-incorporation kinetics in steady state, and using this model we discuss nanowire growth in two experimentally relevant limits: mass transport limited growth and incorporation limited growth. We discuss our modeling results in view of experimental nanowire growth results with a special emphasis on the radius-independent, incorporation limited growth rate in the high pressure limit, observed under specific, extreme conditions of nanowire growth.</p>}},
author = {{Johansson, Jonas and Magnusson, Martin H.}},
issn = {{0022-0248}},
keywords = {{A1. Nanostructures; A3. Vapor phase epitaxy; B1. Nanomaterials; B2. Semiconducting III-V materials}},
language = {{eng}},
publisher = {{Elsevier}},
series = {{Journal of Crystal Growth}},
title = {{From diffusion limited to incorporation limited growth of nanowires}},
url = {{http://dx.doi.org/10.1016/j.jcrysgro.2019.125192}},
doi = {{10.1016/j.jcrysgro.2019.125192}},
volume = {{525}},
year = {{2019}},
}