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Nanowire resonant tunneling diodes

Björk, Mikael LU ; Ohlsson, Jonas LU ; Thelander, Claes LU ; Persson, Ann LU ; Deppert, Knut LU orcid ; Wallenberg, Reine LU and Samuelson, Lars LU (2002) In Applied Physics Letters 81(23). p.4458-4460
Abstract
Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
81
issue
23
pages
4458 - 4460
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000179481900049
  • scopus:0037011472
ISSN
0003-6951
DOI
10.1063/1.1527995
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
id
c8867338-f5bd-42eb-8c10-fbb97b33bc6f (old id 322904)
date added to LUP
2016-04-01 12:10:52
date last changed
2022-04-05 18:49:51
@article{c8867338-f5bd-42eb-8c10-fbb97b33bc6f,
  abstract     = {{Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.}},
  author       = {{Björk, Mikael and Ohlsson, Jonas and Thelander, Claes and Persson, Ann and Deppert, Knut and Wallenberg, Reine and Samuelson, Lars}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{23}},
  pages        = {{4458--4460}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Nanowire resonant tunneling diodes}},
  url          = {{http://dx.doi.org/10.1063/1.1527995}},
  doi          = {{10.1063/1.1527995}},
  volume       = {{81}},
  year         = {{2002}},
}