Surface states on GaN(000(1)over-bar)(1x1) - an angle-resolved photoemission study
(2002) In Surface Science 507. p.186-191- Abstract
- We present the results of angle-resolved photoemission studies on the (0 0 0 (1) over bar) (N-polar) surface of bulk gallium nitride crystals. The bulk and surface band Structure was investigated along Gamma-A and Gamma-K-M directions on the surface with (1 x 1) symmetry. The sets of spectra were obtained in normal and off-normal emission for the surface prepared by Ar+ ion sputtering and annealing and for the same surface enriched with Ga under molecular beam epitaxy conditions. The bulk and surface related features were identified by analysis of the acquired experimental data and by comparison with the results of band structure Calculations.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/333996
- author
- Kowalski, BJ ; Iwanowski, RJ ; Sadowski, Janusz LU ; Kanski, J ; Grzegory, I and Porowski, S
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- surface potential, function, angle resolved photoemission, surface electronic phenomena (work, surface states, etc.), gallium nitride, single crystal surfaces
- in
- Surface Science
- volume
- 507
- pages
- 186 - 191
- publisher
- Elsevier
- external identifiers
-
- wos:000176583700036
- ISSN
- 0039-6028
- language
- English
- LU publication?
- yes
- id
- b28395af-9c6e-4a7c-ab3b-ed5d233adf3d (old id 333996)
- date added to LUP
- 2016-04-01 16:01:13
- date last changed
- 2018-11-21 20:38:09
@article{b28395af-9c6e-4a7c-ab3b-ed5d233adf3d, abstract = {{We present the results of angle-resolved photoemission studies on the (0 0 0 (1) over bar) (N-polar) surface of bulk gallium nitride crystals. The bulk and surface band Structure was investigated along Gamma-A and Gamma-K-M directions on the surface with (1 x 1) symmetry. The sets of spectra were obtained in normal and off-normal emission for the surface prepared by Ar+ ion sputtering and annealing and for the same surface enriched with Ga under molecular beam epitaxy conditions. The bulk and surface related features were identified by analysis of the acquired experimental data and by comparison with the results of band structure Calculations.}}, author = {{Kowalski, BJ and Iwanowski, RJ and Sadowski, Janusz and Kanski, J and Grzegory, I and Porowski, S}}, issn = {{0039-6028}}, keywords = {{surface potential; function; angle resolved photoemission; surface electronic phenomena (work; surface states; etc.); gallium nitride; single crystal surfaces}}, language = {{eng}}, pages = {{186--191}}, publisher = {{Elsevier}}, series = {{Surface Science}}, title = {{Surface states on GaN(000(1)over-bar)(1x1) - an angle-resolved photoemission study}}, volume = {{507}}, year = {{2002}}, }