A 3.4mW 65nm CMOS 5th Order Programmable Active-RC Channel Select Filter for LTE Receivers
(2013) RFIC 2013 p.217-220- Abstract
- In this work a low power 5th order chebyshev
active-RC low pass filter that meets Rel-8 LTE receiver
requirements has been designed with programmable bandwidth
and overshoot. Designed for a homodyne LTE receiver,
filter bandwidths from 700kHz to 10MHz are supported.
The bandwidth of the operational amplifiers is improved
using a novel phase enhancement technique. The filter was
implemented in 65nm CMOS technology with a core area
of 0.29mm2. Its total current consumption is 2.83mA from a
1.2V supply. The measured input referred noise is 39nV/
√
Hz,
the in-band IIP3 is 21.5dBm, at the band-edge the IIP3
is 20.7dBm, the... (More) - In this work a low power 5th order chebyshev
active-RC low pass filter that meets Rel-8 LTE receiver
requirements has been designed with programmable bandwidth
and overshoot. Designed for a homodyne LTE receiver,
filter bandwidths from 700kHz to 10MHz are supported.
The bandwidth of the operational amplifiers is improved
using a novel phase enhancement technique. The filter was
implemented in 65nm CMOS technology with a core area
of 0.29mm2. Its total current consumption is 2.83mA from a
1.2V supply. The measured input referred noise is 39nV/
√
Hz,
the in-band IIP3 is 21.5dBm, at the band-edge the IIP3
is 20.7dBm, the out-of-band IIP3 is 20.6dBm, and the
compression point is 0dBm. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3615776
- author
- Abdulaziz, Mohammed LU ; Nejdel, Anders LU ; Törmänen, Markus LU and Sjöland, Henrik LU
- organization
- publishing date
- 2013
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Active filters, low pass filters, low power electronics, CMOS technology, Operational Amplifiers.
- host publication
- IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2013
- pages
- 217 - 220
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- RFIC 2013
- conference location
- Seattle, United States
- conference dates
- 2013-06-02
- external identifiers
-
- scopus:84883423910
- ISSN
- 1529-2517
- ISBN
- 978-1-4673-6059-3
- DOI
- 10.1109/RFIC.2013.6569565
- language
- English
- LU publication?
- yes
- id
- 4959a864-04f7-484f-9e05-d5b4c982c43a (old id 3615776)
- date added to LUP
- 2016-04-01 12:51:22
- date last changed
- 2024-01-09 04:05:33
@inproceedings{4959a864-04f7-484f-9e05-d5b4c982c43a, abstract = {{In this work a low power 5th order chebyshev<br/><br> active-RC low pass filter that meets Rel-8 LTE receiver<br/><br> requirements has been designed with programmable bandwidth<br/><br> and overshoot. Designed for a homodyne LTE receiver,<br/><br> filter bandwidths from 700kHz to 10MHz are supported.<br/><br> The bandwidth of the operational amplifiers is improved<br/><br> using a novel phase enhancement technique. The filter was<br/><br> implemented in 65nm CMOS technology with a core area<br/><br> of 0.29mm2. Its total current consumption is 2.83mA from a<br/><br> 1.2V supply. The measured input referred noise is 39nV/<br/><br> √<br/><br> Hz,<br/><br> the in-band IIP3 is 21.5dBm, at the band-edge the IIP3<br/><br> is 20.7dBm, the out-of-band IIP3 is 20.6dBm, and the<br/><br> compression point is 0dBm.}}, author = {{Abdulaziz, Mohammed and Nejdel, Anders and Törmänen, Markus and Sjöland, Henrik}}, booktitle = {{IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2013}}, isbn = {{978-1-4673-6059-3}}, issn = {{1529-2517}}, keywords = {{Active filters; low pass filters; low power electronics; CMOS technology; Operational Amplifiers.}}, language = {{eng}}, pages = {{217--220}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{A 3.4mW 65nm CMOS 5th Order Programmable Active-RC Channel Select Filter for LTE Receivers}}, url = {{http://dx.doi.org/10.1109/RFIC.2013.6569565}}, doi = {{10.1109/RFIC.2013.6569565}}, year = {{2013}}, }