Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity
(2013) In Physical Review Letters 111(9).- Abstract
- Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4062914
- author
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review Letters
- volume
- 111
- issue
- 9
- article number
- 095001
- publisher
- American Physical Society
- external identifiers
-
- wos:000323715500006
- scopus:84884244114
- pmid:24033041
- ISSN
- 1079-7114
- DOI
- 10.1103/PhysRevLett.111.095001
- language
- English
- LU publication?
- yes
- id
- e15d94b1-ba0a-4c8f-857e-4ae908e1cae1 (old id 4062914)
- date added to LUP
- 2016-04-01 10:45:32
- date last changed
- 2022-04-28 01:12:15
@article{e15d94b1-ba0a-4c8f-857e-4ae908e1cae1, abstract = {{Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.}}, author = {{MacLellan, D. A. and Carroll, D. C. and Gray, R. J. and Booth, N. and Burza, Matthias and Desjarlais, M. P. and Du, F. and Gonzalez-Izquierdo, B. and Neely, D. and Powell, H. W. and Robinson, A. P. L. and Rusby, D. R. and Scott, G. G. and Yuan, X. H. and Wahlström, Claes-Göran and McKenna, P.}}, issn = {{1079-7114}}, language = {{eng}}, number = {{9}}, publisher = {{American Physical Society}}, series = {{Physical Review Letters}}, title = {{Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity}}, url = {{http://dx.doi.org/10.1103/PhysRevLett.111.095001}}, doi = {{10.1103/PhysRevLett.111.095001}}, volume = {{111}}, year = {{2013}}, }