A 1V SiGe Power Amplifier for 81-86 GHz E-band
(2013) NORCHIP Conference, 2013 p.1-4- Abstract
- This paper presents an architecture for a SiGe E-band power amplifier using a stacked transformers for output power combination. According to simulations, at E-band frequencies, the power combiner consisting of two individual single turn transformers performs significantly better compared to a single common 2:1 transformer with two turns on the secondary side. The power combination allows for a low supply voltage of 1 V, which is beneficial since the supply can be shared between the power amplifier and the transceiver thereby eliminating the need of a separate voltage regulator. To improve the gain of the two-stage amplifier it employs a capacitive cross-coupling technique not yet seen in mm-wave SiGe PAs. The PA is designed in a SiGe... (More)
- This paper presents an architecture for a SiGe E-band power amplifier using a stacked transformers for output power combination. According to simulations, at E-band frequencies, the power combiner consisting of two individual single turn transformers performs significantly better compared to a single common 2:1 transformer with two turns on the secondary side. The power combination allows for a low supply voltage of 1 V, which is beneficial since the supply can be shared between the power amplifier and the transceiver thereby eliminating the need of a separate voltage regulator. To improve the gain of the two-stage amplifier it employs a capacitive cross-coupling technique not yet seen in mm-wave SiGe PAs. The PA is designed in a SiGe process with fr = 200 GHz and achieves a power gain of 12dB, a saturated output power of 16dBm and a 14% peak PAE. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4113635
- author
- Tired, Tobias LU ; Sjöland, Henrik LU ; Bryant, Carl LU and Törmänen, Markus LU
- organization
- publishing date
- 2013
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- PA
- host publication
- [Host publication title missing]
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- NORCHIP Conference, 2013
- conference location
- Vilnius, Lithuania
- conference dates
- 2013-11-11 - 2013-11-12
- external identifiers
-
- scopus:84893609355
- DOI
- 10.1109/NORCHIP.2013.6702018
- language
- English
- LU publication?
- yes
- id
- a45363ce-cff6-4fea-8a72-38f9cdc10ec3 (old id 4113635)
- date added to LUP
- 2016-04-04 12:12:17
- date last changed
- 2024-01-13 03:58:29
@inproceedings{a45363ce-cff6-4fea-8a72-38f9cdc10ec3, abstract = {{This paper presents an architecture for a SiGe E-band power amplifier using a stacked transformers for output power combination. According to simulations, at E-band frequencies, the power combiner consisting of two individual single turn transformers performs significantly better compared to a single common 2:1 transformer with two turns on the secondary side. The power combination allows for a low supply voltage of 1 V, which is beneficial since the supply can be shared between the power amplifier and the transceiver thereby eliminating the need of a separate voltage regulator. To improve the gain of the two-stage amplifier it employs a capacitive cross-coupling technique not yet seen in mm-wave SiGe PAs. The PA is designed in a SiGe process with fr = 200 GHz and achieves a power gain of 12dB, a saturated output power of 16dBm and a 14% peak PAE.}}, author = {{Tired, Tobias and Sjöland, Henrik and Bryant, Carl and Törmänen, Markus}}, booktitle = {{[Host publication title missing]}}, keywords = {{PA}}, language = {{eng}}, pages = {{1--4}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{A 1V SiGe Power Amplifier for 81-86 GHz E-band}}, url = {{http://dx.doi.org/10.1109/NORCHIP.2013.6702018}}, doi = {{10.1109/NORCHIP.2013.6702018}}, year = {{2013}}, }