Dopant Engineering of Inter-Subband Linewidth and Lineshape in Multiwell Heterostructures
Ndebeka-Bandou, Camille ; Wacker, Andreas LU
; Carosella, Francesca
; Ferreira, Robson
and Bastard, Gerald
(2013)
In Applied Physics Express
6(9).
- Abstract
- We show by numerical diagonalization of the electronic Hamiltonian including screened coulombic impurities that the inter-subband absorption lineshape and linewidth in heterostructures can be controlled by a suitable location of the dopants. We also point out that the usual optical conductivity calculations that employ the self-consistent Born approximation often lead to incorrect lineshapes, although the trends for the linewidths versus the dopant location are the same as found in the present numerical approach. (c) 2013 The Japan Society of Applied Physics
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4212363
- author
- Ndebeka-Bandou, Camille
; Wacker, Andreas
LU
; Carosella, Francesca
; Ferreira, Robson
and Bastard, Gerald
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Express
- volume
- 6
- issue
- 9
- article number
- 094101
- publisher
- IOP Publishing
- external identifiers
-
- wos:000324494100026
- scopus:84883696417
- ISSN
- 1882-0778
- DOI
- 10.7567/APEX.6.094101
- language
- English
- LU publication?
- yes
- id
- 1963b99e-e035-4a21-9c89-7a18ac6eaccf (old id 4212363)
- date added to LUP
- 2016-04-01 10:43:03
- date last changed
- 2023-08-31 09:43:00
@article{1963b99e-e035-4a21-9c89-7a18ac6eaccf,
abstract = {{We show by numerical diagonalization of the electronic Hamiltonian including screened coulombic impurities that the inter-subband absorption lineshape and linewidth in heterostructures can be controlled by a suitable location of the dopants. We also point out that the usual optical conductivity calculations that employ the self-consistent Born approximation often lead to incorrect lineshapes, although the trends for the linewidths versus the dopant location are the same as found in the present numerical approach. (c) 2013 The Japan Society of Applied Physics}},
author = {{Ndebeka-Bandou, Camille and Wacker, Andreas and Carosella, Francesca and Ferreira, Robson and Bastard, Gerald}},
issn = {{1882-0778}},
language = {{eng}},
number = {{9}},
publisher = {{IOP Publishing}},
series = {{Applied Physics Express}},
title = {{Dopant Engineering of Inter-Subband Linewidth and Lineshape in Multiwell Heterostructures}},
url = {{https://lup.lub.lu.se/search/files/2074731/4293077.pdf}},
doi = {{10.7567/APEX.6.094101}},
volume = {{6}},
year = {{2013}},
}