Thermoelectric performance of classical topological insulator nanowires
Gooth, Johannes ; Gluschke, Jan-Göran LU ; Zierold, Robert ; Leijnse, Martin LU ; Linke, Heiner LU
and Nielsch, Kornelius
(2015)
In Semiconductor Science and Technology
30(1).
- Abstract
- There is currently substantial effort being invested into creating efficient thermoelectric (TE) nanowires based on topological insulator (TI) chalcogenide-type materials. A key premise of these efforts is the assumption that the generally good TE properties that these materials exhibit in bulk form will translate into similarly good or even better TE performance of the same materials in nanowire form. Here, we calculate TE performance of TI nanowires based on Bi2Te3, Sb2Te3 and Bi2Se3 as a function of diameter and Fermi level. We show that the TE performance of TI nanowires does not derive from the properties of the bulk material in a straightforward way. For all investigated systems the competition between surface states and bulk channel... (More)
- There is currently substantial effort being invested into creating efficient thermoelectric (TE) nanowires based on topological insulator (TI) chalcogenide-type materials. A key premise of these efforts is the assumption that the generally good TE properties that these materials exhibit in bulk form will translate into similarly good or even better TE performance of the same materials in nanowire form. Here, we calculate TE performance of TI nanowires based on Bi2Te3, Sb2Te3 and Bi2Se3 as a function of diameter and Fermi level. We show that the TE performance of TI nanowires does not derive from the properties of the bulk material in a straightforward way. For all investigated systems the competition between surface states and bulk channel causes a significant modification of the TE transport coefficients if the diameter is reduced into the sub 10 mu m range. Key aspects are that the surface and bulk states are optimized at different Fermi levels or have different polarity as well as the high surface to volume ratio of the nanowires. This limits the maximum TE performance of TI nanowires and thus their application in efficient TE devices. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/5085270
- author
- Gooth, Johannes
; Gluschke, Jan-Göran
LU
; Zierold, Robert
; Leijnse, Martin
LU
; Linke, Heiner
LU
and Nielsch, Kornelius
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- semiconductor nanowires, thermoelectric nanostructures, classical, topological insulator, Bi2Te3, layered materials
- in
- Semiconductor Science and Technology
- volume
- 30
- issue
- 1
- article number
- 015015
- publisher
- IOP Publishing
- external identifiers
-
- wos:000347033300016
- scopus:84920194899
- ISSN
- 0268-1242
- DOI
- 10.1088/0268-1242/30/1/015015
- language
- English
- LU publication?
- yes
- id
- d357b5ce-953f-4412-95b1-f33d45c0969d (old id 5085270)
- date added to LUP
- 2016-04-01 13:52:19
- date last changed
- 2023-11-12 23:09:49
@article{d357b5ce-953f-4412-95b1-f33d45c0969d,
abstract = {{There is currently substantial effort being invested into creating efficient thermoelectric (TE) nanowires based on topological insulator (TI) chalcogenide-type materials. A key premise of these efforts is the assumption that the generally good TE properties that these materials exhibit in bulk form will translate into similarly good or even better TE performance of the same materials in nanowire form. Here, we calculate TE performance of TI nanowires based on Bi2Te3, Sb2Te3 and Bi2Se3 as a function of diameter and Fermi level. We show that the TE performance of TI nanowires does not derive from the properties of the bulk material in a straightforward way. For all investigated systems the competition between surface states and bulk channel causes a significant modification of the TE transport coefficients if the diameter is reduced into the sub 10 mu m range. Key aspects are that the surface and bulk states are optimized at different Fermi levels or have different polarity as well as the high surface to volume ratio of the nanowires. This limits the maximum TE performance of TI nanowires and thus their application in efficient TE devices.}},
author = {{Gooth, Johannes and Gluschke, Jan-Göran and Zierold, Robert and Leijnse, Martin and Linke, Heiner and Nielsch, Kornelius}},
issn = {{0268-1242}},
keywords = {{semiconductor nanowires; thermoelectric nanostructures; classical; topological insulator; Bi2Te3; layered materials}},
language = {{eng}},
number = {{1}},
publisher = {{IOP Publishing}},
series = {{Semiconductor Science and Technology}},
title = {{Thermoelectric performance of classical topological insulator nanowires}},
url = {{http://dx.doi.org/10.1088/0268-1242/30/1/015015}},
doi = {{10.1088/0268-1242/30/1/015015}},
volume = {{30}},
year = {{2015}},
}