A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI
(2018) 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) p.1-4- Abstract
- A three stacked power amplifier implemented in 28nm fully depleted silicon-on-insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.
- Abstract (Swedish)
- A three stacked power amplifier implemented in 28nm fully depleted silicon-on- insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/66d1edbf-21eb-466b-8e81-be273e1adea6
- author
- Din, Imad Ud LU ; Andersson, Stefan ; Forsberg, Therese LU and Sjöland, Henrik LU
- organization
- publishing date
- 2018-10-30
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
- conference location
- Tallin, Estonia
- conference dates
- 2018-10-30 - 2018-10-31
- external identifiers
-
- scopus:85060617652
- ISBN
- 978-1-5386-7656-1
- 978-1-5386-7657-8
- DOI
- 10.1109/NORCHIP.2018.8573450
- project
- Efficient mm-Wave Transmitter Design in CMOS Technology
- language
- English
- LU publication?
- yes
- id
- 66d1edbf-21eb-466b-8e81-be273e1adea6
- date added to LUP
- 2019-02-24 01:30:08
- date last changed
- 2024-06-11 05:35:33
@inproceedings{66d1edbf-21eb-466b-8e81-be273e1adea6, abstract = {{A three stacked power amplifier implemented in 28nm fully depleted silicon-on-insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.}}, author = {{Din, Imad Ud and Andersson, Stefan and Forsberg, Therese and Sjöland, Henrik}}, booktitle = {{2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)}}, isbn = {{978-1-5386-7656-1}}, language = {{eng}}, month = {{10}}, pages = {{1--4}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI}}, url = {{http://dx.doi.org/10.1109/NORCHIP.2018.8573450}}, doi = {{10.1109/NORCHIP.2018.8573450}}, year = {{2018}}, }