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Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries.

Wu, Han-Chun ; Chaika, Alexander N ; Huang, Tsung-Wei ; Syrlybekov, Askar ; Abid, Mourad ; Aristov, Victor Yu ; Molodtsova, Olga V ; Babenkov, Sergey V ; Marchenko, D and Sánchez-Barriga, Jaime , et al. (2015) In ACS Nano 9(9). p.8967-8975
Abstract
Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More... (More)
Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
ACS Nano
volume
9
issue
9
pages
8967 - 8975
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:26302083
  • wos:000361935800035
  • scopus:84942337447
  • pmid:26302083
ISSN
1936-086X
DOI
10.1021/acsnano.5b02877
language
English
LU publication?
yes
id
35e4de17-fdf4-48f7-8248-d711894a8d54 (old id 7835057)
date added to LUP
2016-04-01 10:21:36
date last changed
2022-02-25 00:58:17
@article{35e4de17-fdf4-48f7-8248-d711894a8d54,
  abstract     = {{Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.}},
  author       = {{Wu, Han-Chun and Chaika, Alexander N and Huang, Tsung-Wei and Syrlybekov, Askar and Abid, Mourad and Aristov, Victor Yu and Molodtsova, Olga V and Babenkov, Sergey V and Marchenko, D and Sánchez-Barriga, Jaime and Mandal, Partha Sarathi and Varykhalov, Andrei Yu and Niu, Yuran and Murphy, Barry E and Krasnikov, Sergey A and Lübben, Olaf and Wang, Jing Jing and Liu, Huajun and Yang, Li and Zhang, Hongzhou and Abid, Mohamed and Janabi, Yahya T and Molotkov, Sergei N and Chang, Ching-Ray and Shvets, Igor}},
  issn         = {{1936-086X}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{8967--8975}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Nano}},
  title        = {{Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries.}},
  url          = {{http://dx.doi.org/10.1021/acsnano.5b02877}},
  doi          = {{10.1021/acsnano.5b02877}},
  volume       = {{9}},
  year         = {{2015}},
}