Growth of In As nanowires with the morphology and crystal structure controlled by carrier gas flow rate
(2015) In Journal of Crystal Growth 430. p.87-92- Abstract
- We report on he growth of single crystal InAs nanowires on Si/SiOx substrates by chemical vapor deposition (CVD). Both pure zincblende InAs nanowires and twin superlattice InAs nanowires are produced. We demonstrate that the morphology and crystal structure of these nanowires can be controlled by tuning the H-2 carrier gas How rate in a CVD furnace and show that highly selected growth of twin superlattice nanowires are achieved at high carrier gas How rates. Our work provides a new route to grow and phase-engineer single crystal InAs nanowires for a wide range of potential applications. (C) 2015 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8220796
- author
- Li, Ming ; Wang, Jingyun ; Li, Kan ; Xing, Yingjie and Xu, Hongqi LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Crystal morphology, Low dimensional structures, Nanostructures, Growth, from vapor, Nanomaterials, Semiconducting III-V material
- in
- Journal of Crystal Growth
- volume
- 430
- pages
- 87 - 92
- publisher
- Elsevier
- external identifiers
-
- wos:000362014800015
- scopus:84941271013
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2015.08.006
- language
- English
- LU publication?
- yes
- id
- 2798cb61-dbc9-4b82-a28d-853938ecece3 (old id 8220796)
- date added to LUP
- 2016-04-01 14:29:27
- date last changed
- 2022-01-28 00:51:53
@article{2798cb61-dbc9-4b82-a28d-853938ecece3, abstract = {{We report on he growth of single crystal InAs nanowires on Si/SiOx substrates by chemical vapor deposition (CVD). Both pure zincblende InAs nanowires and twin superlattice InAs nanowires are produced. We demonstrate that the morphology and crystal structure of these nanowires can be controlled by tuning the H-2 carrier gas How rate in a CVD furnace and show that highly selected growth of twin superlattice nanowires are achieved at high carrier gas How rates. Our work provides a new route to grow and phase-engineer single crystal InAs nanowires for a wide range of potential applications. (C) 2015 Elsevier B.V. All rights reserved.}}, author = {{Li, Ming and Wang, Jingyun and Li, Kan and Xing, Yingjie and Xu, Hongqi}}, issn = {{0022-0248}}, keywords = {{Crystal morphology; Low dimensional structures; Nanostructures; Growth; from vapor; Nanomaterials; Semiconducting III-V material}}, language = {{eng}}, pages = {{87--92}}, publisher = {{Elsevier}}, series = {{Journal of Crystal Growth}}, title = {{Growth of In As nanowires with the morphology and crystal structure controlled by carrier gas flow rate}}, url = {{http://dx.doi.org/10.1016/j.jcrysgro.2015.08.006}}, doi = {{10.1016/j.jcrysgro.2015.08.006}}, volume = {{430}}, year = {{2015}}, }