Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
(2002) In Physical Review B (Condensed Matter and Materials Physics) 66(8).- Abstract
- We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at... (More)
- We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at k(parallel to)=0 considerably. In the structure with a thick InAs layer grown on GaSb, we have obtained a negative indirect gap in the in-plane dispersion resulting from the anticrossing of electronlike and highest heavy-hole-like subbands. If the substrate is InAs, the gap becomes direct and positive. This phenomenon can be treated as strain-induced semimetal-semiconductor phase transition. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/909707
- author
- Zakharova, A ; Yen, ST and Chao, Koung-An LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 66
- issue
- 8
- publisher
- American Physical Society
- external identifiers
-
- wos:000177972500070
- scopus:0037104321
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.66.085312
- language
- English
- LU publication?
- yes
- id
- 6bf1852c-40aa-4fe2-b3a8-f4f510f57e72 (old id 909707)
- date added to LUP
- 2016-04-01 16:14:52
- date last changed
- 2022-01-28 18:23:04
@article{6bf1852c-40aa-4fe2-b3a8-f4f510f57e72, abstract = {{We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at k(parallel to)=0 considerably. In the structure with a thick InAs layer grown on GaSb, we have obtained a negative indirect gap in the in-plane dispersion resulting from the anticrossing of electronlike and highest heavy-hole-like subbands. If the substrate is InAs, the gap becomes direct and positive. This phenomenon can be treated as strain-induced semimetal-semiconductor phase transition.}}, author = {{Zakharova, A and Yen, ST and Chao, Koung-An}}, issn = {{1098-0121}}, language = {{eng}}, number = {{8}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells}}, url = {{http://dx.doi.org/10.1103/PhysRevB.66.085312}}, doi = {{10.1103/PhysRevB.66.085312}}, volume = {{66}}, year = {{2002}}, }